Silicene

Salomon, Éric; Beato-Medina, Daniel; Padova, Paola De; Angot, Thierry; Lay, G. Le

doi:10.1007/978-3-030-46906-1_37

Cited by 2 publications

(1 citation statement)

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“…However, the paper remained practi uncited for eighteen years, until the birth of silicene in 2012 when its number of cita jumped up dramatically. Since Si and Ge exist in nature only in diamond form, i.e., pu sp 3 hybridized, in contrast with carbon, whose most stable form is sp 2 hybridized-lay graphite, obviously until 2012 nobody believed in the possibility of graphene-like si or germanium [10].…”

Section: Standalone Germanenementioning

confidence: 99%

The Renaissance and Golden Age of Epitaxial Dry Germanene

et al. 2023

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Germanene, as an artificial graphene-like near room temperature topological insulator, compatible with ubiquitous silicon technology, is potentially the most promising artificial Xene for ultra-scale nanoelectronics. Here, we follow its emergence and development when prepared in situ under ultra-high vacuum in clean and controlled conditions by dry epitaxy on prominent metal surfaces (e.g., aluminum, silver, gold). We describe its predicted electronic properties and its birth in 2014, even if it was just a renaissance, as it was only understood after 51 years after an undeciphered birth certificate lost in oblivion. We emphasize the lifting of germanene flakes from an aluminum template with the tip of a scanning tunneling microscope, and their repositioning to form bilayer germanene with Bernal stacking. Finally, we discuss the growth of monolayer germanene in a single phase harboring Dirac fermions, following a bottom-up synthesis strategy by segregation on a gold thin film in epitaxy on a germanium support.

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Section: Standalone Germanenementioning

confidence: 99%