2021
DOI: 10.1364/oe.427192
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Silicate bonding of sapphire to SESAMs: adjustable thermal lensing for high-power lasers

Abstract: Silicate bonding is a flexible bonding method that enables room-temperature bonding of many types of materials with only moderate flatness constraints. It is a promising approach for bonding components in high power laser systems, since it results in a thin and low-absorption interface layer between the bonded materials. Here we demonstrate for the first time silicate bonding of a sapphire window to a SEmiconductor Saturable Absorber Mirror (SESAM) and use the composite structure to mode-lock a high-power thin… Show more

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Cited by 12 publications
(8 citation statements)
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“…Square samples are diced from the wafer and silicate bonded to a 1-mm-thick wedged sapphire window [45]. We observe that this results in an improved cold curvature of the SESAM, while simultaneously giving a more desirable thermal lensing behavior.…”
Section: Sample Growth and Bondingmentioning
confidence: 94%
“…Square samples are diced from the wafer and silicate bonded to a 1-mm-thick wedged sapphire window [45]. We observe that this results in an improved cold curvature of the SESAM, while simultaneously giving a more desirable thermal lensing behavior.…”
Section: Sample Growth and Bondingmentioning
confidence: 94%
“…Another concept proposed for controlling the thermal lens of SESAMs is based on bonding a sapphire substrate to the top of the SESAM. [ 88 ] This allows for engineering of the thermal lens both in amplitude and sign through the thickness of the bonded sapphire substrate.…”
Section: Mode‐locking Mechanismsmentioning
confidence: 99%
“…Typically, the mirror is a distributed Bragg reflector (DBR), and there is one or more quantum well (QW)-based saturable absorber layers. Dielectric top coatings can be used to increase the saturation fluence and damage threshold [ 41 ], and substrate transfer and other techniques can be used for very high average power operation [ 42 , 43 ]. For the SESAMs studied here, the DBR is based on an AlAs/GaAs layer stack, while the QWs are InGaAs layers embedded between non-absorbing AlAs layers.…”
Section: Sesam Parameters and Characteristicsmentioning
confidence: 99%