metal oxide-based gas sensors, for which device performance relies on rapid oxygen exchange reactions at the gas-solid interfaces. [1][2][3][4][5][6][7] In SOFCs, the oxygen reduction reaction (ORR) occurs at the cathode and the corresponding polarization resistance depends on the adsorption/dissociation of oxygen species on the surface, followed by charge transfer between the surface and the adsorbed species, and finally the incorporation of charged oxygen ionic species into the electrode lattice. Although many studies related to improving the initial performance of mixed conducting metal oxides have been pursued to date, particularly focused on tuning the oxygen exchange coefficient (k chem ), the performance of such devices often degrades rapidly due to the inevitable poisoning by extrinsic sources over time during device operation. [8][9][10][11] Sources of Si-impurities are not only widely present in material processing and testing (e.g., the use of quartz reactors, furnace refractories, glass or glass-ceramic sealants, and thermal insulation materials), but also during device operation (e.g., volatile organic silicon compounds (VOSCs) and gas impurities). [11][12][13][14][15][16][17][18][19][20][21][22] Si-contamination is known to cause significant performance degradation of many electrochemical devices. [8] For example, Perz et al. showed that silica reacts with the La 0.6 Sr 0.4 Co 0.2 Fe 0.8 O 3-δ (LSCF) surface, a mixed ionic and electronic conducting (MIEC) cathode commonly applied in SOFCs, forming a continuous La-Sr-silicate layer. [22] This impurity layer limits adsorption/dissociation of oxygen molecules on the LSCF surface, increasing the area-specific resistance (ASR) by a factor 6 after long-term operation (1340 h) at 700 °C. Zhao et al. reported the formation of a blocking siliceous layer on dense thin films of Pr 0.1 Ce 0.9 O 2-δ (PCO), originating from quartz tubes or furnace insulation utilized during measurement, leading to the degradation of the oxygen surface exchange coefficient (k chem ) by a factor 40. [19] Hertz et al. demonstrated the ability to reduce the ASR associated with thin film interdigitated Pt electrodes on a yttria-stabilized zirconia (YSZ) electrolyte by 1000-fold following HF etching of surface silica species, thereby allowing oxygen gas to readily access the triple phase reaction sites. [15] To date, most previous studies point to silica forming a continuous glassy blocking layer as the source of the degradation.Metal oxides are an important class of functional materials, and for many applications, ranging from solid oxide fuel/electrolysis cells, oxygen permeation membranes, and oxygen storage materials to gas sensors (semiconducting and electrolytic) and catalysts, the interaction between the surface and oxygen in the gas phase is central. Ubiquitous Si-impurities are known to impede this interaction, commonly attributed to the formation of glassy blocking layers on the surface. Here, the surface oxygen exchange coefficient (k chem ) is examined for Pr 0.1 Ce 0.9 O 2...