Silica nano-rings and nano-hollows: Preparation and UV photoluminescence emission

Chen, Hao; Li, Chaorong; Jiao, Zhifeng; Yu, Zhinong; Yang, Zhimei; Jin, Yufeng; Li, Zhiwei; Song, Hucheng; Gao, Yanli; Zhang, Yunsen; Zhu, Jianguo; Gong, Ming; Sun, Xueliang

doi:10.1016/j.jnoncrysol.2008.06.021

Cited by 2 publications

(3 citation statements)

References 32 publications

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“…Any UV emission ranging from 364 to 384 nm can be resonantly coupled to Ag NCs formed by ion implantation [20].This wavelength range is suitable for emission from interface states between the Si and its oxide namely the -SiO 3 group, which o Si structural surface and results in a strong 370 nm PL [21]. Similar broadband UV emission has been reported in silica nano-rings coated with ultra-thin Ag films [22]. However, the emission from these annealed Silica nano-rings in the presence of Ag were limited to the emission at higher energy > 2.9 eV.…”

Section: Resultssupporting

confidence: 56%

Origin of room temperature broadband light emission and carrier dynamics in Ag ion-implanted Silicon nanocrystals

Singh¹,

Gryczynski²,

Neogi³

2012

Opt. Mater. Express

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We studied the origin of broad band light emission in the Ultraviolet (UV) to the red from silicon nanoparticles fabricated using a single low energy (32 keV) silver ion implantation with a fluence of 5*10 15 ions/cm 2 in crystalline Si. It is found from a systematic study of the annealing carried out at certain temperatures that the spectral characteristics in the UV and blue region remains unchanged except for the enhancement of light emission intensity due to annealing. The annealing results in nucleation of Ag nanoclusters in the vicinity of Si nanoparticles which enhances the emission intensity. Time-resolved photoluminescence (TRPL) measurement demonstrates that the emission originates from both highly localized defect bound excitons at the nanoscale Si interface, as well as surface and interface traps associated with the increased surface area of the Si nanocrystals. The emission in the UV is due to interband transitions from localized excitonic states at the interface of Si/SiO 2 or from the surface of Si nanocrystals. The radiative efficiency of the UV and the green emission from the Si nanoparticles can be modified by the localized plasmons interaction induced by the nucleation of Silver nanoparticles on controlled annealing of the samples. Broadband emission ranging from the UV to the red wavelength range can be obtained on Ag implanted onto a single silicon substrate.

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Section: Resultssupporting

confidence: 56%

Origin of room temperature broadband light emission and carrier dynamics in Ag ion-implanted Silicon nanocrystals

Singh¹,

Gryczynski²,

Neogi³

2012

Opt. Mater. Express

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show abstract

“…The formation of ^Si-O-O-Si^defects is dependent on the concentration of Ag nanoparticles and temperature. 27,28 The reactions between Ag and SiO 2 may result in the formation of ^Si-O-O-Sid efects, and the formation mechanism was proposed in a previous study. 28 In addition, at high temperature, ^Si-Sid efects may transform into ^Si-O-O-Si^defects by the reaction between ^Si-Si^defects and O 2 .…”

Section: Inuence Of Sintering Temperature On Existing States Of Ag I...mentioning

confidence: 93%

“…27,28 The reactions between Ag and SiO 2 may result in the formation of ^Si-O-O-Sid efects, and the formation mechanism was proposed in a previous study. 28 In addition, at high temperature, ^Si-Sid efects may transform into ^Si-O-O-Si^defects by the reaction between ^Si-Si^defects and O 2 . 24 The presence of defect centers from pure SiO 2 was further conrmed by excitation spectra, as shown in the inset of Fig.…”

Section: Inuence Of Sintering Temperature On Existing States Of Ag I...mentioning

confidence: 93%

Investigation on existing states and photoluminescence property of silver in the SiO₂three-dimensionally ordered macroporous materials

et al. 2014

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The photoluminescence properties of silver species, including Ag + , Ag + -Ag + , Ag 0 , and Ag nanoparticles in various matrices, such as gel and glass have been extensively reported. In the present study, we present the preparation of silver including SiO 2 three-dimensionally ordered macroporous (3DOM) materials and investigate the existing states and photoluminescence property of silver in the SiO 2 3DOM materials. The results show that only Ag + ions exist in the SiO 2 3DOM materials sintered at temperature below 400 C. With the increasing sintering temperature, the Ag + ions gradually transform into Ag + -Ag + , where simultaneously, a part of Ag + -Ag + transform into Ag nanoparticles. The Ag + -Ag + and Ag nanoparticles are formed in the SiO 2 3DOM materials sintered at temperature from 450 to 650 C. Finally, only Ag nanoparticles occur in the SiO 2 3DOM materials prepared at 750 C. The formation mechanisms of Ag species were discussed in the SiO 2 3DOM materials.

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Silica nano-rings and nano-hollows: Preparation and UV photoluminescence emission

Cited by 2 publications

References 32 publications

Origin of room temperature broadband light emission and carrier dynamics in Ag ion-implanted Silicon nanocrystals

Origin of room temperature broadband light emission and carrier dynamics in Ag ion-implanted Silicon nanocrystals

Investigation on existing states and photoluminescence property of silver in the SiO₂three-dimensionally ordered macroporous materials

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Silica nano-rings and nano-hollows: Preparation and UV photoluminescence emission

Cited by 2 publications

References 32 publications

Origin of room temperature broadband light emission and carrier dynamics in Ag ion-implanted Silicon nanocrystals

Origin of room temperature broadband light emission and carrier dynamics in Ag ion-implanted Silicon nanocrystals

Investigation on existing states and photoluminescence property of silver in the SiO2three-dimensionally ordered macroporous materials

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Investigation on existing states and photoluminescence property of silver in the SiO₂three-dimensionally ordered macroporous materials