Silent Raman modes in zinc oxide and related nitrides

Manjón, F. J.; Marı́, B.; Serrano, Joaquim Rigola; Romero, A. H.

doi:10.1063/1.1856222

Cited by 357 publications

(233 citation statements)

References 44 publications

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“…However, the Raman spectrum of the DZ phase would rather resemble that of the first-order one-phonon density of states of the zinc blende phase because disorder of cations and vacancies at cation sites will promote defect-induced or defect-assisted Raman scattering (DARS) due to the loss of the translational symmetry of the crystal. This Raman activity has been observed in many disordered, nanocrystalline, and pressure-treated compounds; [33][34][35][36] however, as already commented, no Raman scattering similar to a one-phonon density of states of the zinc blende phase has been ever reported to occur at high pressures neither above the pressure range 11-14 GPa in DCCdGa 2 Se 4 nor in other adamantine ternary OVCs at high pressures. 11,12,19,20 In fact, Ursaki et al concluded, from the analysis of their Raman results, 11 that the decrease of the intensity of the A 1 mode above 11 GPa was due to the onset of a second stage of disorder where all cations and vacancies mixed together, thus leading to the DZ phase in good agreement with the theoretically predicted stages of disorder proposed by Bernard and Zunger for OVCs at high temperatures but not for high pressures.…”

Section: -mentioning

confidence: 99%

High-pressure optical and vibrational properties of CdGa2Se4: Order-disorder processes in adamantine compounds

Gomis

Vilaplana

Manjón

et al. 2012

Journal of Applied Physics

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High pressure structural stability of BaLiF3 J. Appl. Phys. 110, 123505 (2011) Pressure effects on the transitions between disordered phases in supercooled liquid silicon J. Chem. Phys. 135, 204508 (2011) Microfabrication of controlled-geometry samples for the laser-heated diamond-anvil cell using focused ion beam technology Rev. Sci. Instrum. 82, 115106 (2011) First-principles investigations of elastic stability and electronic structure of cubic platinum carbide under pressure J. Appl. Phys. 110, 103507 (2011) Additional information on J. Appl. Phys. High-pressure optical absorption and Raman scattering measurements have been performed in defect chalcopyrite (DC) CdGa 2 Se 4 up to 22 GPa during two pressure cycles to investigate the pressure-induced order-disorder phase transitions taking place in this ordered-vacancy compound. Our measurements reveal that on decreasing pressure from 22 GPa, the sample does not revert to the initial phase but likely to a disordered zinc blende (DZ) structure the direct bandgap and Raman-active modes of which have been measured during a second upstroke. Our measurements have been complemented with electronic structure and lattice dynamical ab initio calculations. Lattice dynamical calculations have helped us to discuss and assign the symmetries of the Raman modes of the DC phase. Additionally, our electronic band structure calculations have helped us in discussing the order-disorder effects taking place above 6-8 GPa during the first upstroke.

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confidence: 99%

High-pressure optical and vibrational properties of CdGa2Se4: Order-disorder processes in adamantine compounds

Gomis

Vilaplana

Manjón

et al. 2012

Journal of Applied Physics

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“…We attribute its observation to disorder-activated Raman scattering since it is known that many silent modes become Raman active as a consequence of structural disorder. 48 In fact, in a previous work on the Zn 1Àx Mn x Ga 2 Se 4 series, a broad band appearing around 180 cm À1 in the Raman spectra of all compounds of the series, either with SG I-42 m or I-4 was assigned to disorder activated vibrations having a similar pattern as the A 2 mode. 49 Consequently, with all these considerations, we have tentatively assigned this broad band to the silent A 2 1 mode [see open triangles in Fig.…”

Section: Hp Raman Measurements Of Ds-znga 2 Sementioning

confidence: 99%

High-pressure Raman scattering study of defect chalcopyrite and defect stannite ZnGa2Se4

Vilaplana

Gomis

Pérez-González

et al. 2013

Journal of Applied Physics

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High-pressure Raman scattering measurements have been carried out in ZnGa 2 Se 4 for both tetragonal defect chalcopyrite and defect stannite structures. Experimental results have been compared with theoretical lattice dynamics ab initio calculations and confirm that both phases exhibit different Raman-active phonons with slightly different pressure dependence. A pressure-induced phase transition to a Raman-inactive phase occurs for both phases; however, the sample with defect chalcopyrite structure requires slightly higher pressures than the sample with defect stannite structure to fully transform into the Raman-inactive phase. On downstroke, the Raman-inactive phase transforms into a phase that could be attributed to a disordered zincblende structure for both original phases; however, the sample with original defect chalcopyrite structure compressed just above 20 GPa, where the transformation to the Raman-inactive phase is not completed, returns on downstroke mainly to its original structure but shows a new peak that does not correspond to the defect chalcopyrite phase. The pressure dependence of the Raman spectra with this new peak and those of the disordered zincblende phase is also reported and discussed. V C 2013 AIP Publishing LLC.

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“…However, as-grown samples generally do not exhibit this mode, since H is bound to Mg in Mg-N-H complexes, which are Raman-silent in this range. 16 An annealing step is necessary in order to break the complex, to allow H to diffuse towards the sample surface, and to finally reveal the free-Mg LVM. [17][18][19] As expected and as seen in Fig.…”

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Functional Mn–Mgk cation complexes in GaN featured by Raman spectroscopy

Devillers

Leite

Silva

et al. 2013

Applied Physics Letters

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The evolution of the optical branch in the Raman spectra of (Ga,Mn)N:Mg epitaxial layers as a function of the Mn and Mg concentrations, reveals the interplay between the two dopants. We demonstrate that the various Mn-Mg-induced vibrational modes can be understood in the picture of functional Mn–Mgk complexes formed when substitutional Mn cations are bound to k substitutional Mg through nitrogen atoms, the number of ligands k being driven by the ratio between the Mg and the Mn concentrations.

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Silent Raman modes in zinc oxide and related nitrides

Cited by 357 publications

References 44 publications

High-pressure optical and vibrational properties of CdGa2Se4: Order-disorder processes in adamantine compounds

High-pressure optical and vibrational properties of CdGa2Se4: Order-disorder processes in adamantine compounds

High-pressure Raman scattering study of defect chalcopyrite and defect stannite ZnGa2Se4

Functional Mn–Mgk cation complexes in GaN featured by Raman spectroscopy

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