SiHx Absorbance Bands in Si3N4 Powder Surfaces Analyzed by Diffuse Reflectance Infrared Fourier Transform Spectroscopy

Hien, Tran Thi Thu; Ishizaki, Chanel; Ishizaki, Kōzō

doi:10.2109/jcersj.112.1

Cited by 7 publications

(6 citation statements)

References 7 publications

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“…It should be noted that frequencies of stretch vibrations of Si-H bonds in silicon nitride and in a-Si:H are notably different: about 2200 cm −1 for the first case and 2000-2100 cm −1 for the second case. As it was shown by Hien et al[20], the frequency of stretch vibrations of Si-H bonds in the case of neighbouring N and H atoms can reach 2122 cm −1 . In the case of only Si neighbouring atoms this frequency is 2012 cm −1…”

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confidence: 68%

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Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films

Bugaev

Zelenina

Володин

2012

International Journal of Spectroscopy

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Vibrational properties of hydrogenated silicon-rich nitride (SiN x :H) of various stoichiometry (0.6 ≤ x ≤ 1.3) and hydrogenated amorphous silicon (a-Si:H) films were studied using Raman spectroscopy and Fourier transform infrared spectroscopy. Furnace annealing during 5 hours in Ar ambient at 1130 • C and pulse laser annealing were applied to modify the structure of films. Surprisingly, after annealing with such high-thermal budget, according to the FTIR data, the nearly stoichiometric silicon nitride film contains hydrogen in the form of Si-H bonds. From analysis of the FTIR data of the Si-N bond vibrations, one can conclude that silicon nitride is partly crystallized. According to the Raman data a-Si:H films with hydrogen concentration 15% and lower contain mainly Si-H chemical species, and films with hydrogen concentration 30-35% contain mainly Si-H 2 chemical species. Nanosecond pulse laser treatments lead to crystallization of the films and its dehydrogenization.

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confidence: 68%

“…The frequency of Si-H peak is about 2000 cm −1 [19]. The films deposited at temperatures higher than [20]. FTIR method can be used for quantitative hydrogen measurements [21], but for transmission experiments the substrate should be transparent in IR range.…”

Section: Resultsmentioning

confidence: 99%

Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films

Bugaev

Zelenina

Володин

2012

International Journal of Spectroscopy

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“…The starting point of surface activities as surface groups or surface configuration of each powder is different and depends on the manufacturing method and further treatments. 14)19) The effect of the applied milling process in modifying the original surface will also be different depending on the raw powder characteristics. This is clearly seen in Fig.…”

Section: Resultsmentioning

confidence: 99%

Mechanical modifications of silica powders evaluated by different methods

Hien

Shirai

Fuji

2016

J. Ceram. Soc. Japan

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The surface activity of three raw silica powders with different structures, one crystalline (C1) and two amorphous (A1 and A2 with different purities) as well as the powders obtained by milling at different conditions measured as the amounts of dissolved Si 4+ ion into ammonia solution was reported previously by the authors. In the present work the surface of the same powders is evaluated by the quantity of OH surface groups. The intensity of the OH bands quantified by DRIFT correlates with the amount of dissolved Si 4+ measured by ICP for all powders. The amount of silanol surface groups (SiOH) increased at any milling condition and reach maximum value. The amorphous powders show higher surface activities than the crystalline powder. The A2 powder shows the highest amount of surface groups and quantity of dissolved Si 4+ in ammonia solution and the crystalline powder shows the least. The effect of particles size distribution, particle size and morphology on powders surface activity is discussed.

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“…The C4 and C6 powders were washed by acid in the final treatment. The experimental conditions and powders specifications are the same as previously reported [1,2].…”

Section: Methodsmentioning

confidence: 99%

“…NH x , OH and SiH x groups have been observed in the IR spectra of different Si related materials and films. A review of the literature indicates a very wide range of wavenumbers for these groups [1,2]. In the present work, the DRIFT spectra of seven commercial Si 3 N 4 powders produced by three different production processes including four different nitriding media and different final treatments were investigated in the NH x /OH (4000 -2800 cm -1 ) and SiH x (2300 -2000 cm -1 ) stretching absorbance regions.…”

Section: Introductionmentioning

confidence: 98%

Commercial Silicon Nitride Powders Surface Groups Measured by Diffuse Reflectance Infrared Fourier Transform Spectroscopy

Hien

Ishizaki²,

Ishizaki

2004

KEM

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The DRIFT spectra of seven commercial Si 3 N 4 powders produced by three different processes (diimide precipitation, carbothermal reduction and nitridation of silicon) and four nitriding media (NH 3 gas, NH 3 liquid, N 2 gas and mixture of N 2 + H 2 gas) with different final treatments were investigated in the NH x /OH (4000 -2800 cm -1 ) and SiH x (2300 -2000 cm -1 ) stretching absorbance regions. For six powders the largest intensity bands correspond to Si-NH x groups and H-SiSiSiO configuration, and only the powder produced by the carbothermal reduction method using N 2 as nitridation media shows the highest intensity bands for Si-OH groups and H-SiOOO configuration.

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SiHx Absorbance Bands in Si3N4 Powder Surfaces Analyzed by Diffuse Reflectance Infrared Fourier Transform Spectroscopy

Cited by 7 publications

References 7 publications

Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films

Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films

Mechanical modifications of silica powders evaluated by different methods

Commercial Silicon Nitride Powders Surface Groups Measured by Diffuse Reflectance Infrared Fourier Transform Spectroscopy

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