Significantly suppressed thermal transport by doping In and Al atoms in gallium nitride

Abstract

Thermal transport plays a key role for the working stability of Gallium Nitride (GaN) based optoelectronic devices, where doping has been widely employed for practical applications. However, it remains unclear...

Alloying Reversed Anisotropy of Thermal Transport in Bulk Al0.5Ga0.5N

“…It is deduced that the thermal conductivity of Al 0.5 Ga 0.5 N is much lower than that of GaN and AlN, along both the in-plane and cross-plane directions. Such a behavior diverges from the 2D situation and is in accord with previous studies (κ alloyed < κ unalloyed ). − Notably, the κ of Al 0.5 Ga 0.5 N along the in-plane (142 W/mK) direction is larger than that in the cross-plane (105 W/mK) direction, which is evidently divergent from that of GaN and AlN. We have carefully compared our calculated phonon dispersions and thermal conductivities with available measurements and other calculations in the literature (Table ).…”

First-principles study of thermal transport properties in ferroelectric HfO2 and related fluorite-structure ferroelectrics

“…It is well acknowledged that doping changes the lattice structure and often suppresses thermal conduction via enhancing lattice anharmonicity and introducing impurity scattering. 21 To understand the underlying mechanisms responsible for such suppression, the k of other compounds sharing the same parent crystal structure may provide some insights but has been rarely explored. Unravelling the chemical trend in the k of fluorite-structure ferroelectrics may also enable efficient manipulation of k via chemical doping, complementary to the tuning of k by a physical stimulus such as pressure, 22 strain, 23,24 or temperature.…”