Significant strain dependence of piezoelectric constants inInxGa1−xN/<

Pressure Dependence of Exciton Binding Energy in GaN/AlxGa1 - xN Quantum Wells

“…It has been demonstrated that the strong piezoelectric fields existing in wurtzite heterostructures grown in the (0001) direction reduce substantially the pressure coefficient of the light emission in the nitride based quantum wells as compared to the pressure coefficient of the energy gap in unstrained bulk materials [1][2][3]. This effect was attributed mainly to the pressure induced enhancement of the piezoelectric field.…”

“…This effect was attributed mainly to the pressure induced enhancement of the piezoelectric field. These studies based on the band to band photoluminescence measurements usually ignored the pressure effect on the exciton binding energy assuming that its contribution to the overall effect is small [2,3]. Recent theoretical analysis [4] employing a simple two band variational technique indicated that the exciton binding energy in GaN/Al x Ga 1−x N quantum wells with barrier composition x = 0.3 and well thickness equal to 30 Å indeed increases only slightly with pressure at the rate of about 0.1 meV per 1 GPa.…”

Pressure Dependence of the Light Emission in Zinc-Blende InGaAs/GaAs and InGaN/GaN Quantum Wells

“…Pressure dependence of the light emission in semiconductor quantum wells (QWs) has been extensively studied in the recent years [1][2][3][4][5]. These studies have revealed that pressure coefficient of the light emission ( dE E / dP ) for a QW can be substantially different from the pressure coefficient of the band gap for unstrained bulk material of the same chemical composition.…”

“…It has been discovered that the magnitude of dE E / dP in QWs depends significantly on the built-in biaxial strains and piezoelectric fields. Unexpectedly, the linear theory of elasticity and piezoelectricity often failed to predict the values of dE E /dP in semiconductor QWs, and the nonlinear elastic and piezoelectric effects have been taken into account [1][2][3][4].…”

Effect of Nonlinear Elasticity on Interband and Intersubband Transition Energies in GaN/AlN Superlattices

“…Due to the presence of large internal strains and piezoelectric fields in these structures, the conventional linear theories of elasticity and piezoelectricity have turned out to be insufficient [1][2][3][4][5][6][7][8][9][10]. Recently, higher order electromechanical effects, including the nonlinear piezoelectricity [1][2][3], electromechanical coupling [4][5][6], and nonlinear elasticity [7][8][9][10] have been studied in nitride semiconductors and their heterostructures.…”