Abstract:Nanostructured CuWO4 photoanodes were fabricated through a facile electrodeposition method, which was followed by annealing the sample at 500 °C for 2 h. The morphologies, crystalline structure, electronic states, optical behaviors, and photoelectrochemical characteristics of the CuWO4 nanomaterial were examined by scanning electron microscopy, X‐ray diffraction, X‐ray photoelectron spectroscopy, UV/Vis spectroscopy, and impedance spectroscopy, showing that the formed triclinic CuWO4 nanoparticles had an indir… Show more
“…70% increase over that of CuWO 4 (0.32 mA•cm −2 ). However, no obvious shift of the OER onset potential is observed, which is also found in other reports on cocatalyst-modified CuWO 4 [26,[39][40][41]. This indicates that the charge-transfer resistance around the onset potential range is quite large and thus even an OER cocatalyst fails to effectively accelerate the charge transfer.…”
Section: Photoactivity and Photostability Of Cuwo4 And Cuwo4/irco-pi ...supporting
confidence: 77%
“…Note that, in Ref. [40,41], although the authors named the photoanode CuWO 4 , it actually was, as the authors mentioned in the articles, a mixture of WO 3 and CuWO 4 based on the XRD data where unique WO 3 peaks at ca. 33.2 • can be clearly seen.…”
Section: Photoactivity and Photostability Of Cuwo4 And Cuwo4/irco-pi ...mentioning
Severe interfacial electron–hole recombination greatly limits the performance of CuWO4 photoanode towards the photoelectrochemical (PEC) oxygen evolution reaction (OER). Surface modification with an OER cocatalyst can reduce electron–hole recombination and thus improve the PEC OER performance of CuWO4. Herein, we coupled CuWO4 nanoflakes (NFs) with Iridium–cobalt phosphates (IrCo-Pi) and greatly improved the photoactivity of CuWO4. The optimized photocurrent density for CuWO4/IrCo-Pi at 1.23 V vs. reversible hydrogen electrode (RHE) rose to 0.54 mA∙cm−2, a ca. 70% increase over that of bare CuWO4 (0.32 mA∙cm−2). Such improved photoactivity was attributed to the enhanced hole collection efficiency, which resulted from the reduced charge-transfer resistance via IrCo-Pi modification. Moreover, the as-deposited IrCo-Pi layer well coated the inner CuWO4 NFs and effectively prevented the photoinduced corrosion of CuWO4 in neutral potassium phosphate (KPi) buffer solution, eventually leading to a superior stability over the bare CuWO4. The facile preparation of IrCo-Pi and its great improvement in the photoactivity make it possible to design an efficient CuWO4/cocatalyst system towards PEC water oxidation.
“…70% increase over that of CuWO 4 (0.32 mA•cm −2 ). However, no obvious shift of the OER onset potential is observed, which is also found in other reports on cocatalyst-modified CuWO 4 [26,[39][40][41]. This indicates that the charge-transfer resistance around the onset potential range is quite large and thus even an OER cocatalyst fails to effectively accelerate the charge transfer.…”
Section: Photoactivity and Photostability Of Cuwo4 And Cuwo4/irco-pi ...supporting
confidence: 77%
“…Note that, in Ref. [40,41], although the authors named the photoanode CuWO 4 , it actually was, as the authors mentioned in the articles, a mixture of WO 3 and CuWO 4 based on the XRD data where unique WO 3 peaks at ca. 33.2 • can be clearly seen.…”
Section: Photoactivity and Photostability Of Cuwo4 And Cuwo4/irco-pi ...mentioning
Severe interfacial electron–hole recombination greatly limits the performance of CuWO4 photoanode towards the photoelectrochemical (PEC) oxygen evolution reaction (OER). Surface modification with an OER cocatalyst can reduce electron–hole recombination and thus improve the PEC OER performance of CuWO4. Herein, we coupled CuWO4 nanoflakes (NFs) with Iridium–cobalt phosphates (IrCo-Pi) and greatly improved the photoactivity of CuWO4. The optimized photocurrent density for CuWO4/IrCo-Pi at 1.23 V vs. reversible hydrogen electrode (RHE) rose to 0.54 mA∙cm−2, a ca. 70% increase over that of bare CuWO4 (0.32 mA∙cm−2). Such improved photoactivity was attributed to the enhanced hole collection efficiency, which resulted from the reduced charge-transfer resistance via IrCo-Pi modification. Moreover, the as-deposited IrCo-Pi layer well coated the inner CuWO4 NFs and effectively prevented the photoinduced corrosion of CuWO4 in neutral potassium phosphate (KPi) buffer solution, eventually leading to a superior stability over the bare CuWO4. The facile preparation of IrCo-Pi and its great improvement in the photoactivity make it possible to design an efficient CuWO4/cocatalyst system towards PEC water oxidation.
“…Therefore, approaches such as the introduction of effective OER electrocatalyst to minimize the energy penalty associated with water oxidation improved the catalytic efficiency and lowered the excessive potential closely related to the interfacial charge transfer. Specifically, nonprecious and abundant electrocatalysts including Mn-phosphate (MnPO), Co-phosphate, and Ni-based electrocatalysts, have been widely used to reveal the remarkable increase in electrocatalytic properties [10]. Bartlett's group reported that the MnPO-based CuWO 4 photoelectrode exhibited improved PEC performance, corresponding to the cathodic shift of the onset potential for water oxidation by ~ 100 mV and a mild increase in photocurrent density, particularly at low applied bias [11].…”
The pristine fluorine-doped SnO 2 (abbreviated as FTO) inverse opal (IO) was developed using a 410 nm polystyrene bead template. The nanolayered copper tungsten oxide (CuWO 4) was decorated on the FTO IO film using a facile electrochemical deposition, subsequently followed by annealing at 500 o C for 90 min. The morphologies, crystalline structure, optical properties and photoelectrochemical characteristics of the FTO and CuWO 4-decorated FTO (briefly denoted as FTO/ CuWO 4) IO film were investigated by field emission scanning electron microscopy, X-ray diffraction, UV-vis spectroscopy and electrochemical impedance spectroscopy, showing FTO IO in the hexagonally closed-pack arrangement with a pore diameter and wall thickness of about 300 nm and 20 nm, respectively. Above this film, the CuWO 4 was electrodeposited by controlling the cycling number in cyclic voltammetry, suggesting that the CuWO 4 formed during 4 cycles (abbreviated as CuWO 4 (4 cycles)) on FTO IO film exhibited partial distribution of CuWO 4 nanoparticles. Additional distribution of CuWO 4 nanoparticles was observed in the case of FTO/CuWO 4 (8 cycles) IO film. The CuWO 4 layer exhibits triclinic structure with an indirect band gap of approximately 2.5 eV and shows the enhanced visible light absorption. The photoelectrochemical (PEC) behavior was evaluated in the 0.5 M Na 2 SO 4 solution under solar illumination, suggesting that the FTO/CuWO 4 (4 cycles) IO films exhibit a photocurrent density (J s c
“…Enlighten by the above DFT calculation, we assumed that fabrication of ultrathin CuWO 4 film with high crystallization will be favorable for improving the PEC performance. At present, there are many methods to prepare CuWO 4 thin films, such as reactive co-sputtering, [31] electrodeposition" [32,33] and hydrothermal synthesis. [24,34] However, these methods are usually complicated and the thickness of the film can not be well controlled.…”
CuWO 4 is a promising n-type oxide semiconductor for photoelectrochemical (PEC) applications due to the suitable band gap and good photochemical stability. An easy and large-scale fabrication of ultrathin CuWO 4 films with improved PEC performance is highly desired for future practical application but still challenging. Considering that the ultrasonic spray pyrolysis approach is a low-cost and scalable technique for fabricating films with controllable thickness, we here report the controllable fabrication of ultrathin CuWO 4 films with improved PEC performance by an automatic ultrasonic spray pyrolysis method. The effects of different tungsten sources and film thickness on the PEC performance of the resultant CuWO 4 film were studied in detail. We find that the ultrathin CuWO 4 film prepared from the ammonium metatungstate with a thickness of 2.16 μm shows the best PEC performance of 41 μA cm À 2 at 1.23 V vs.RHE for water oxidation under visible light irradiation. We also explored the different charge transfer mechanism and PEC performance of the resultant CuWO 4 films under back and front illumination.
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