Significant enhancement of photovoltage in artificially designed perovskite oxide structures

Abstract

La0.9Sr0.1MnO3/insulator/SrNb0.007Ti0.993O3 multilayer and La0.9Sr0.1MnO3/SrNb0.007Ti0.993O3/In2O3:SnO2(ITO)/La0.9Sr0.1MnO3/SrNb0.007Ti0.993O3 multilayer structures were designed to enhance the photovoltage. The photovoltages of these two structures under an illumination of 308 nm laser are 410 and 600 mV, respectively. The latter is 20 times larger than that (30 mV) observed in La0.9Sr0.1MnO3/SrNb0.007Ti0.993O3 single junction. The origin of such significant enhancement of photovoltage is discussed in this letter. These results suggest that the photoelectric property of perovskite oxides could be much improved by artificial structure designing. The enhanced photovoltaic effects have potential applications in the ultraviolet photodetection and solar cells.

Oxygen Vacancy Induced Room-Temperature Metal–Insulator Transition in Nickelate Films and Its Potential Application in Photovoltaics

“…In a comparison of the p–n and p–i–n heterojunctions, where “i” refers to a 15 u.c. insulating STO layer, it is apparent that the insertion of a thin STO layer improves V OC without affecting J SC , − resulting in the much improved PCE. Among them, the best performance is observed in Au/NNO­(20 u.c.…”

Rectifying Characteristics of the Perovskite Oxide La1−xSrxMnO3/Nb‐0.7 wt%‐Doped SrTiO3 Heterojunction

“…[ 1,2 ] In recent years, perovskite oxide heterostructures have attracted a lot of attention due to its potential applications compared with traditional p–n junctions. [ 3–6 ] As perovskite oxides have exotic electronic states, [ 7–9 ] the heterostructures which is composed of perovskite oxides, show plenty of interesting physical properties, such as rectifying characteristics, [ 10,11 ] photovoltaic effect, [ 12–14 ] positive colossal magnetoresistance, [ 15,16 ] resistive switching effect, [ 17 ] and so on. Numerous perovskite oxide heterostructures were developed for compound functional application, such as all‐oxide diode, memristor, solar cell, photodetector, and so on.…”

Device performance analysis for lead‐free perovskite solar cell optimisation

“…Here, 3 µm is the preferred absorber layer thickness for LSMO-ZnO configuration. LSMO-STO has very small and almost constant (0.47%) PCE [21] with the LSMO thickness. V oc and J sc also increase with the thickness of LSMO in both the configurations, this is because of more photon absorption at thicker absorber layer, enhancing more electron-hole pair generation.…”

“…This difference can be associated with the improved electrical properties of the STO layer as compared with the other ZnO layer. The efficiency dependence with light illumination is related to the rate of electron-hole pair generation at large wavelengths [21,28,29].…”