Since the first transmission electron microscopy (TEM) image of carbon nanotubes (CNTs) was reported, [1] much attention has been paid to their potential applications. These applications include chemical probes, nanoprobes, sensors, hydrogen storage devices, and displays. [2±5] Recently, many new tubular nanomaterials, such as SiO 2 , [6,7] V 2 O 5 , [8] and MoS 2 , [9] have been reported. These tubular materials have large specific surface areas and hollow structures, which make them potentially suitable for applications as catalysts, storage devices, and templates to grow other nanosized materials. One of the new potential applications is to incorporate the hollow tubes into a polymer matrix to reduce the total dielectric constant of the composite, which is very important in the microelectronic industry. Polyimide (PI) has been widely used as an interlayer dielectric in microelectronic devices, as electrical insulation of conventional appliances, and for other industrial applications because of its high-temperature durability, good mechanical properties, excellent chemical and thermal stabilities, low thermal expansion coefficient, and low dielectric constant (e).[10±12]Another attractive feature of PI is that it can be filled with certain low-dielectric-constant material to adjust its dielectric constant without greatly effecting its mechanical strength and chemical stability. Recently, silica particle/PI composite films have been prepared via a sol±gel process. Its dielectric constant, however, monotonically increased with the content of silica particles.[13±15] This does not meet the requirement for low dielectric constant in the microelectronic industry. Although the layered-silicate/PI nanocomposites display much lower water absorption, substantially lower leakage-current density, and a lower thermal expansion coefficient than those of pristine PI, the drawback is that the dielectric constant of the doped composite is larger than that of the matrix PI, and also increases with the content of inclusion. [16] Other inclusion materials, such as alumina (dielectric constant e = 10), titania (e = 100), and CNTs (conductive), [17,18] will lead to a significant increase of dielectric constant of the composites. In this study, silica tubes (STs) were synthesized by self-assembly, and the ST/PI composite films were then prepared by mixing the STs and PI precursors in a solution of N,N-dimethylacetamide (DMAc) under ultrasonic agitation. The ST contents in the composites are 0, 1, 3, 10, and 20 wt.-%, respectively. The mixed solutions were polymerized in situ and then cast onto a flat glass plate. The mixture was thermally imidized from 50 to 300 C to form ST/PI composite films. The morphology of the silica tubes derived from the template selfassembly was characterized using scanning electron microscopy (SEM) and TEM. The dielectric properties of the composites were characterized with a temperature ranging from ±150 to 150 C and a frequency of 1 kHz to 1 MHz. The mechanism for the reduction of the dielectric constan...