Significance of Work Function Fluctuations in SiGe/Si Hetero-Nanosheet Tunnel-FET at Sub-3 nm Nodes

Impact of the Figures of Merit (FoMs) Definitions on the Variability in Nanowire TFET: NEGF Simulation Study

“…This means that the band-offset and the consequent stronger gate-control or steeper switch characteristic, lead to opposite effects on the current variability, counteracting each other's influence. As expected, the Considering that the lower grain size can be achieved, such as by incorporation of C or copper into TiN mental to make an amorphous film [5], [24], it is also interesting to study the dependence of FoM on criteria under the influence of WFV with different grain size, especially in the potential HTFET. Fig.…”

“…The objective of this paper is to provide the dependence of variability on the bias or current criteria, and this is a trend analysis as like in Refs. [14] and [5]. Thus, we believe the work-function values or probability distributions have no influence on our conclusion.…”

“…As previous reported in Refs. [5] and [7], the influence of WFV on 𝐼 !" becomes gradually weak as the decrease of grain size due to the lower impact on energy barrier.…”

“…The previous studies covering the variability aspect in TFET, mainly focus on statistical variations of the Figures of Merit (FoM) which are defined by some fixed criteria [5]- [9]. Opposite to MOSFETs, the TFETs have SS that are no longer linear on a logarithmic scale [1], meaning that the FoM criteria should have influence on the variability.…”

“…[14] and [5] with nanowire structure, the TiN metal with two distinct grain orientations, which are set with 60% and 40% occurring probability and meaningful work-function difference of 0.2 eV [15], has been adopted. However, the selected work function values are not always consistent [5], [14]. They are respectively set as 5.3 eV and 5.1 eV for convergence purpose here.…”