Signature of the ideality factor in III-nitride multi quantum well light emitting diodes

Römer, Friedhard; Witzigmann, Bernd

doi:10.1007/s11082-017-1264-4

Cited by 5 publications

(6 citation statements)

References 25 publications

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“…An enhanced ideality factor is not a clear evidence for IHB, though. There are competing mechanisms such as the SRH recombination [37], the luminescence re-distribution inside the MQW [24], and the most prominent series resistance.…”

Section: Discussionmentioning

confidence: 99%

“…For σ = 100 meV the electron Fermi level separation is as high as E Fn,3D − E Fn,2D ≈ 5k b T. The Fermi level separation eliminates the effect of the bound population on the scattering. This buffering capability of the scattering is discussed in [24] and is reflected in the decrease of η sc while η qw increases.…”

Section: Single Quantum Wellmentioning

confidence: 96%

“…This effect is illustrated in Figure 8b. The re-distribution enables the balanced luminescence distribution amongst the QWs [24]. 9.…”

Section: Multi-quantum Wellmentioning

confidence: 99%

“…To support the detailed interpretation of the I/V curve and current contributions in the active region of an an LED an equivalent circuit model has been developed [24]. The equivalent circuit models the ideality factor η = qI k B T ∂V ∂I (9) and facilitates the analysis of the I/V curve.…”

Section: Equivalent Circuitmentioning

confidence: 99%

“…In Section 2.1, we demonstrate that the IHB not only affects the spectral emission, but has also an immediate influence on the I/V curve and the ideality factor. The detailed study is enabled by an LED circuit model [24]. Details are given in Section 4.3.…”

Section: Introductionmentioning

confidence: 99%

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Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes

et al. 2021

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In the past years, light-emitting diodes (LED) made of GaN and its related ternary compounds with indium and aluminium have become an enabling technology in all areas of lighting. Visible LEDs have yet matured, but research on deep ultraviolet (UV) LEDs is still in progress. The polarisation in the anisotropic wurtzite lattice and the low free hole density in p-doped III-nitride compounds with high aluminium content make the design for high efficiency a critical step. The growth kinetics of the rather thin active quantum wells in III-nitride LEDs makes them prone to inhomogeneous broadening (IHB). Physical modelling of the active region of III-nitride LEDs supports the optimisation by revealing the opaque active region physics. In this work, we analyse the impact of the IHB on the luminescence and carrier transport III-nitride LEDs with multi-quantum well (MQW) active regions by numerical simulations comparing them to experimental results. The IHB is modelled with a statistical model that enables efficient and deterministic simulations. We analyse how the lumped electronic characteristics including the quantum efficiency and the diode ideality factor are related to the IHB and discuss how they can be used in the optimisation process.

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Section: Discussionmentioning

confidence: 99%

Section: Single Quantum Wellmentioning

confidence: 96%

“…This effect is illustrated in Figure 8b. The re-distribution enables the balanced luminescence distribution amongst the QWs [24]. 9.…”

Section: Multi-quantum Wellmentioning

confidence: 99%

Section: Equivalent Circuitmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes

et al. 2021

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Importance of satisfying thermodynamic consistency in optoelectronic device simulations for high carrier densities

Farrell,

Moatti,

O’Donovan

et al. 2023

Opt Quant Electron

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We show the importance of using a thermodynamically consistent flux discretization when describing drift–diffusion processes within light emitting diode simulations. Using the classical Scharfetter–Gummel scheme with Fermi–Dirac statistics is an example of such an inconsistent scheme. In this case, for an (In,Ga)N multi quantum well device, the Fermi levels show an unphysical hump within the quantum well regions. This result originates from neglecting diffusion enhancement associated with Fermi–Dirac statistics in the numerical flux approximation. For a thermodynamically consistent scheme, such as the SEDAN scheme, the humps in the Fermi levels disappear. We show that thermodynamic inconsistency has far reaching implications on the current–voltage curves and recombination rates.

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Temperature induced carrier transition and its effect on optical intensity of InGaN-based light-emitting diodes

Dalapati

Manik

Basu

2020

Optik

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Signature of the ideality factor in III-nitride multi quantum well light emitting diodes

Cited by 5 publications

References 25 publications

Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes

Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes

Importance of satisfying thermodynamic consistency in optoelectronic device simulations for high carrier densities

Temperature induced carrier transition and its effect on optical intensity of InGaN-based light-emitting diodes

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