Signal-to-Noise Ratio Analysis Based on Different Space Remote Sensing Instruments

Interface Trap Effect on the n-Channel GaN Schottky Barrier-Metal–Oxide Semiconductor Field-Effect Transistor for Ultraviolet Optoelectronic Integration

“…The ability to characterize ultraviolet (UV) emission spectra is important because it can provide important insights into the semiconductor industry, military aircraft survivability equipment, space-based communication, solar science, and even biological agents [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 ]. Within the semiconductor industry, extreme UV (EUV) lithography technology using a wavelength of 13.5 nm has facilitated the creation of a complex integrated circuit fabrication process for the most advanced microchips (7, 5, and 3 nm modes).…”

“…In these systems, spectra from 240 to 280 nm are applied to detect the tail flames of approaching missiles. In addition, UV reflection monitoring technologies, such as spaceborne imagers (e.g., satellites) and unmanned aerial vehicles (UAVs), are important components for the tracking and managing of missiles, aircraft, and the Earth’s resources [ 11 ]. Accordingly, there is increasing demand for advanced-performance UV photodetectors that can detect light in the UV spectral region and for the monolithic integration of UV optoelectronic devices.…”

“…A high dark current caused by trap-assisted leakage through defects deteriorates the photo-response characteristics of UV photodetectors, resulting in poor detection capability [ 19 , 20 , 21 , 22 ]. Moreover, during imaging processes, the high noise (fixed pattern and temporal) caused by the defects decreases the signal-to-noise ratio (SNR), adversely affecting the quality of the sensing image [ 11 , 22 , 23 , 24 , 25 , 26 , 27 ]. Moreover, since these defects result in current collapse and poor breakdown voltages in GaN-based power semiconductors, reducing both the defects and the dark current are essential challenges to be addressed.…”