Signal formation and decay in CdTe x‐ray detectors under intense irradiation

Abstract

The response of Cd(Zn)Te Schottky and resistive detectors to intense x-rays is investigated in a commercial computed tomography (CT) system to assess their potential for medical diagnostics. To describe their signal height, responsivity, signal-to-noise ratio (SNR), and detective quantum efficiency the devices are modeled as solid-state ionization chambers with spatially varying electric field and charge collection efficiency. The thicknesses and pixel areas of the discrete detector elements are 0.5-2 mm and a few mm2, respectively. The incident spectrum extends from 26 to 120 keV and comprises 10(10) quanta/s cm2. It photogenerates a carrier concentration in the semiconductor that is two to three orders of magnitude above the intrinsic concentration, but remains to a similar extent below the charge densities on the device electrodes. Stable linear operation is achieved with the Schottky-type devices under high bias. Their behavior can be modeled well if negatively charged near-midgap bulk defects with a concentration of 10(11)-10(13) cm-3 are assumed. The bulk defects explain the amount and time constant (about 100 ms) of the detrapping current measured after x-ray pulses (afterglow). To avoid screening by the trapped space charge the bias voltage should exceed 100(V) x [detector thickness/mm]2. Dark currents are of the order of the generation-recombination current, i.e., 300 pA/mm3 detector volume. With proper device design the signal height approaches the theoretical maximum of 0.2 A/W. This high responsivity, however, is not exploited in CT since the SNR is determined here by the incident quantum noise. As a consequence of the detrapping current, the response speed does not meet CT requirements. A medium-term effort for crystal growth appears necessary to achieve the required reduction of the trap density by an order of magnitude. Scintillation based detectors are, therefore, still preferred in fast operating medical diagnostic systems.

CdTe/CZT under high flux irradiation

“…Such a detector has not been realised so far, because of the "polarization" effect, a reduction of the electric field strength inside the detector [8,17]. Immobile, trapped charge carriers accumulating during irradiation leading to a lower field inside the detector and recombination of charge carriers are responsible for this polarization effect [18,19]. Thus the mean height of pulses becomes smaller and hence the height of some pulses falls below the detection threshold.…”

Screening Effects in High Resistivity CdTe for X-ray and Gamma Ray Detectors

“…This is in a very good agreement with our previous estimate based on evaluation of room-temperature lux-ampere characteristics 11 as well as with results of measurements of discharge current performed on highresistivity CdTe and CdZnTe. 12 No shift of the PC peak was observed in the case of sample 5. This situation can correspond to one of the limiting cases of N deep < 10 12 cm )3 or N deep > 10 13 cm )3 .…”

Comparison of Pixelated CdZnTe, CdTe and Si Sensors With the Simultaneously Counting and Integrating CIX Chip

“…The long term runaway of the detector currents in CdZnTe has recently also been observed at high bias on CdZnTe samples with high products [16]. Like CdZnTe, CdTe also suffers from time-dependent current signals [17]. These crystals all show a slow exponential decrease in signal amplitude under irradiation with typical time constants on the order of 70 s. After tube shut-off this is followed by an undershoot of the integrator current, which then only slowly returns to the baseline.…”