Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect Transistors

Gate-to-Drain Capacitance Dependent Model for Noise Performance Evaluation of InAlAs/InGaAs Double-gate HEMT

“…The conventional equivalent circuit used for noise performance evaluation [8,11] is shown with solid lines in Fig. 2, whereas in our present model, an additional gate-to-drain capacitance (C gd ), is added, which is denoted by dotted line.…”

“…However, for improving the accuracy of microwave and millimeterwave circuit design, a comprehensive and accurate active device model is imperative. The authors in their recent work proposed a charge control model based on Pucel's noise theory [8][9][10] for the noise performance evaluation of a symmetric tied-gate InAlAs/InGaAs double-gate HEMT [11]. Superior noise performance was observed for the DG-HEMT as compared to the SG-HEMT in terms of lower noise resistance and lower Minimum Noise Figure. The analytical results thereby obtained for the operating frequency of 94 GHz and at a high drain voltage of 0.5V were observed to show good agreement with the ATLAS device simulation results [12] and the earlier reported Monte Carlo simulation and experimental results [1].…”

Development of Short Gate Fet's

“…Also neglected here is the small 'bandgap narrowing effect due to doping variation. Where d is the reduced potential at the drain, and is given by (Pucel, 1975 Differentiating (14) with respect to Y, Z' hence Qg can be evaluated.…”

Comparative Analysis of Different Cad Methods for Extraction of the Hemt Noise Wave Model Parameters

“…For this reason, a large number of circuit designers still uses the older and cheaper measurement setups, resulting in time-consuming noise measurements. Consequently, different transistor noise models were developed [1][2][3][4][5][6][7][8][9] in order to provide more efficient transistor noise analysis within circuit simulators. Most of the proposed transistor noise models represent the noise generated in a component using equivalent voltage and/or current sources [3,[5][6].…”