2015
DOI: 10.1063/1.4917018
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Sign change in the tunnel magnetoresistance of Fe3O4/MgO/Co-Fe-B magnetic tunnel junctions depending on the annealing temperature and the interface treatment

Abstract: Magnetite (Fe3O4) is an eligible candidate for magnetic tunnel junctions (MTJs) since it shows a high spin polarization at the Fermi level as well as a high Curie temperature of 585°C. In this study, Fe3O4/MgO/Co-Fe-B MTJs were manufactured. A sign change in the TMR is observed after annealing the MTJs at temperatures between 200°C and 280°C. Our findings suggest an Mg interdiffusion from the MgO barrier into the Fe3O4 as the reason for the change of the TMR. Additionally, different treatments of the magnetite… Show more

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Cited by 22 publications
(23 citation statements)
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“…Especially, thin magnetite films (Fe 3 O 4 ) have attracted intensive research interest in the last decade in the field of spintronics [2] and spin caloritronics [3,4]. Due to their anticipated half-metallic behavior with complete spin polarization at the Fermi level [5] and high (bulk) Curie temperature of 858 K [6], thin magnetite films are promising candidates for room temperature spintronic devices such as highly spin-polarized electrodes for magnetic tunneling junctions [7,8,9] or spin injectors [10]. Furthermore, multilayers of magnetite and platinum show huge thermoelectric effects [11] based on the recently observed spin Seebeck effect in magnetite [12] pushing the development of more efficient thermoelectric nanodevices [13].…”
Section: Introductionmentioning
confidence: 99%
“…Especially, thin magnetite films (Fe 3 O 4 ) have attracted intensive research interest in the last decade in the field of spintronics [2] and spin caloritronics [3,4]. Due to their anticipated half-metallic behavior with complete spin polarization at the Fermi level [5] and high (bulk) Curie temperature of 858 K [6], thin magnetite films are promising candidates for room temperature spintronic devices such as highly spin-polarized electrodes for magnetic tunneling junctions [7,8,9] or spin injectors [10]. Furthermore, multilayers of magnetite and platinum show huge thermoelectric effects [11] based on the recently observed spin Seebeck effect in magnetite [12] pushing the development of more efficient thermoelectric nanodevices [13].…”
Section: Introductionmentioning
confidence: 99%
“…Thus, the underlying electronic and magnetic structure determining the properties of the magnetite thin film in question or the tunnel magneto resistance in magnetic tunnel junctions with magnetite electrodes. 15,16,17,18 Potential approach to minimize or suppress Mg segregation, besides rather low substrate temperatures during magnetite growth, is an additional buffer layer, e.g. metallic iron 19 or NiO 20 between the Fe 3 O 4 and the substrate.…”
Section: Introductionmentioning
confidence: 99%
“…In case of MgO tunnel barriers adjacent to magnetite electrodes, the interdiffusion of the magnesium ions during annealing affects the magnitude and the sign of the TMR. 24 The magnesium interdiffusion can be reduced, and higher annealing temperatures for magnetite are possible if iron buffer layers are deposited on the MgO substrate prior to the deposition of the magnetite films. 25 Here, a 10 nm iron film functions as a sacrificing layer that is completely oxidized after the annealing process at higher temperatures, while the surface near region of the 10 nm overlaying magnetite film remains unaffected by the Mg interdiffusion.…”
mentioning
confidence: 99%