SiGe vertical NW GAA TFET with improved current and low leakage

Anand, Akshaya; Nair, Archana R; Sreekumar, Vaishnavi; Sadasivan, Viswas; Ramakrishnan, V.

doi:10.1016/j.matpr.2022.05.414

Cited by 1 publication

(1 citation statement)

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“…Among them, tunnel fieldeffect transistor (TFET) utilize quantum tunneling mechanisms to overcome the Boltzmann limit, using band-to-band tunneling effects to achieve subthreshold swing lower than 60 mV dec −1 [4]. TFET have several advantages, including low subthreshold swing, low power supply voltage [5], suppression of short-channel effects [6], and low leakage current [7]. The structure of TFET is similar to metal-oxidesemiconductor FET (MOSFET), with the main difference being that the drain and source regions in MOSFET are doped in the same way, while in TFET, the drain and source regions are doped in opposite ways.…”

Section: Introductionmentioning

confidence: 99%

Bilateral sidewall engineering Si_1–xGe_x iTFET for low power display application^*

Lin,

Chu

2023

Nanotechnology

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In this work, we demonstrate the performance enhancement of bottom-gated inductive line-tunneling TFET (iTFET) through the integration of bilateral sidewall engineering with SiGe mole fraction variation, considering the feasibility of the fabrication process. We also employ a metal-semiconductor interface for carrier induction to improve the ION, resulting in a lower subthreshold swing (S.Savg). Using Sentaurus TCAD simulations, we show that the dominant current mechanism is line tunneling, and the hump effect is mitigated by using SiGe with different mole fractions on the sidewalls. Compared to conventional TFETs, which require at least three doping processes and annealing, the proposed device requires only one doping process and utilizes the metal-semiconductor interface for carrier induction, significantly reducing the fabrication cost and thermal budget. These measurement based simulations show that the S.Savg is improved to 21.5 mV/dec with an ION/IOFF ratio of 106 at VD=0.2V. This is the first time that a TFT with a subthreshold swing of less than 60 mV/Dec has been proposed, so it will save much more power in the future and displays with high energy efficiency can be realized and widely used in IoT applications.

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Section: Introductionmentioning

confidence: 99%

Bilateral sidewall engineering Si_1–xGe_x iTFET for low power display application^*

Lin,

Chu

2023

Nanotechnology

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SiGe vertical NW GAA TFET with improved current and low leakage

Cited by 1 publication

References 17 publications

Bilateral sidewall engineering Si_1–xGe_x iTFET for low power display application^*

Bilateral sidewall engineering Si_1–xGe_x iTFET for low power display application^*

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SiGe vertical NW GAA TFET with improved current and low leakage

Cited by 1 publication

References 17 publications

Bilateral sidewall engineering Si1–x Ge x iTFET for low power display application *

Bilateral sidewall engineering Si1–x Ge x iTFET for low power display application *

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Bilateral sidewall engineering Si_1–xGe_x iTFET for low power display application^*

Bilateral sidewall engineering Si_1–xGe_x iTFET for low power display application^*