SiGe technology and circuits for automotive radar applications

Pacheco, Sergio; Reuter, Ralf; Trotta, S.; Salle, Didier; John, J.P.

doi:10.1109/sirf.2011.5719345

2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems 2011

DOI: 10.1109/sirf.2011.5719345

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SiGe technology and circuits for automotive radar applications

Sergio Pacheco¹,

Ralf Reuter²,

S. Trotta³

et al.

Abstract: Recent advancements in SiGe device development enable the realization of 77GHz automotive radar systems using relatively low-cost silicon technology. This paper will discuss technology requirements for the radar design and also present examples of receiver and transmitter circuit implementations.

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Millimeter-wave three-state tunable stopband resonator based on integrated MEMS

Rynkiewicz

Franc

Coccetti³

et al. 2017

2017 IEEE Asia Pacific Microwave Conference (APMC)

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SiGe technology and circuits for automotive radar applications

Cited by 10 publications

References 5 publications

Millimeter-wave three-state tunable stopband resonator based on integrated MEMS

Millimeter-wave three-state tunable stopband resonator based on integrated MEMS

An enhanced 180nm millimeter-wave SiGe BiCMOS technology with fT/fMAX of 260/350GHz for reduced power consumption automotive radar IC's

A 90nm BiCMOS technology featuring 400GHz f<inf>MAX</inf> SiGe:C HBT

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