Abstract:As channel lengths shrink continuously to smaller dimensions in order to improve performance and packing density, lithography, isolation, power supply and short channel effects have proved to be major limitations. Recently vertical MOSFETs (VMOS), also known as surround gate transistors, or 3-D side-wall transistors have been shown to overcome these process limitations. In this paper, we review the various VMOS technologies and applications and compare the performance of these devices to planar devices. We als… Show more
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