SiGe Semiconductor Devices for Cryogenic Power Electronics - IV

Ward, R.R.; Dawson, W.J.; Zhu, Lijun; Kirschman, Randall; Niu, Guofu; Nelms, R.M.; Mueller, O.; Hennessy, Michael; Mueller, Eduard K.; Patterson, R. S.; Dickman, J.E.; Hammoud, Ahmad

doi:10.1109/apec.2006.1620766

Cited by 7 publications

(4 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…SiGe devices show high gain in contrast to conventional Si bipolar junction transistor which exhibit gain loss with lower temperatures [16]. SiGe devices show high gain in contrast to conventional Si bipolar junction transistor which exhibit gain loss with lower temperatures [16].…”

Section: Low Temperaturesmentioning

confidence: 99%

See 1 more Smart Citation

Trends and Challenges

Ardebili

Pecht²

2009

Encapsulation Technologies for Electronic Applications

View full text Add to dashboard Cite

Section: Low Temperaturesmentioning

confidence: 99%

“…16 A packaged optoelectronic biochip BIOMIC with a case of black epoxy potting material; the tubings are the fl uid inlet and outlet, respectively (© 2005 IEEE)[28]. 15 Electrode and amplifi er assembly for a microminiaturized brain implantable "neuroprobe" device (a) prior to and (b) after silicone encapsulation (© 2005 IEEE)[29].…”

mentioning

confidence: 99%

Trends and Challenges

Ardebili

Pecht²

2009

Encapsulation Technologies for Electronic Applications

View full text Add to dashboard Cite

“…Although not within the scope of this paper, we have also designed, fabricated and characterized SiGe cryogenic power diodes, under separate programs (36,37). _____________________________________ **Temperatures quoted for our measurements are those measured on the baseplate to which the packaged device is mounted.…”

Section: Ge Diodesmentioning

confidence: 99%

“…We have undertaken development of power semiconductor devices based on SiGe and Ge, intended for operation over a wide temperature range, from room temperature down to deep cryogenic temperatures (down to ~ 30 K or ~ -240°C) (1)(2)(3)(4).…”

Section: Introductionmentioning

confidence: 99%

SiGe and Ge Cryogenic Power Transistors

et al. 2006

View full text Add to dashboard Cite

We have undertaken development of power semiconductor devices based on SiGe and Ge, intended for operation over a wide temperature range, from room temperature down to deep cryogenic temperatures, ~30 K (~ -240{degree sign}C). We summarize results for Ge diodes (~10 A/400 V), Ge junction field-effect transistors (Ge JFETs, ~0.5 A/30 V), Ge metal-insulator field-effect transistors (Ge MIS-FETs ~1 A/20 V) and SiGe heterojunction bipolar transistors (SiGe HBTs, ~10 A/50 V). As a practical demonstration, we have used SiGe HBTs and SiGe diodes as the active devices in 100-W power-conversion circuits, operating from room temperature down to ~30 K (~ -240{degree sign}C) with increased efficiency as temperature de-creases. Our developments demonstrate the potential of alternative semiconductor materials to provide excellent performance for power applications down to deep cryogenic temperatures.

show abstract