SiGe regenerative frequency divider operating up to 63 GHz

Mullrich, J.; Klein, W.; Khlifi, R.; Rein, H.-M.

doi:10.1049/el:19991200

Cited by 19 publications

(6 citation statements)

References 4 publications

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“…13). It is similar to that described in [17], [18], however the maximum input frequency is now substantially increased (up to 100 GHz) and the power consumption is reduced drastically. In a former version of the divider, regions of potential instable operation have been detected by measurements which are now eliminated by reducing the current through the emitter followers of the first divider stage, thus also reducing power consumption.…”

Section: A 80 Ghz Wideband Vcosupporting

confidence: 63%

A Low-Power Wideband Transmitter Front-End Chip for 80 GHz FMCW Radar Systems With Integrated 23 GHz Downconverter VCO

Pohl

Klein

Aufinger

et al. 2012

IEEE J. Solid-State Circuits

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A low-power FMCW 80 GHz radar transmitter front-end chip is presented, which was fabricated in a SiGe bipolar production technology ( GHz, GHz). Additionally to the fundamental 80 GHz VCO [1], a 4:1-frequency divider (up to 100 GHz), a 23 GHz local oscillator (VCO) with a low phase noise of dBc Hz (1 MHz offset), a PLL-mixer and a static frequency divider is integrated together with several output buffers. This chip was designed for low power consumption (in total W, i.e., 100 mA at 5 V supply voltage), which is dominated by the 80 GHz VCO due to the demands for high output power ( dBm) and low phase noise (minimum dBc Hz at 1 MHz offset) within the total wide tuning range from 68 GHz to 92.5 GHz ( GHz). Measurements of the double-PLL system at 80 GHz showed a low phase noise of dBc Hz at 10 kHz offset frequency.

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Section: A 80 Ghz Wideband Vcosupporting

confidence: 63%

A Low-Power Wideband Transmitter Front-End Chip for 80 GHz FMCW Radar Systems With Integrated 23 GHz Downconverter VCO

Pohl

Klein

Aufinger

et al. 2012

IEEE J. Solid-State Circuits

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“…아울러, 과거에는 SiGe 바이폴라 트랜지스터를 사용하 여 주파수 분할기를 설계하였지만, 점점 CMOS 공정이 발달하면서 SiGe 바이폴라 트랜지스터보다 공정이 쉬워 지고 가격이 낮아져 CMOS를 이용한 회로 설계가 많이 진행되고 있다 [2], [3] . …”

Section: ⅰ 서 론unclassified

Analysis of Input/Output Transfer Characteristic to Transmit Modulated Signals through a Dynamic Frequency Divider

Ryu¹,

Park²

2016

The Journal of Korean Institute of Electromagnetic Engineering

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In order to transmit baseband signals through frequency dividing devices, we studied the transfer function of the device in the term of the baseband signal distortion. From the analysis, it is shown that the magnitude of the envelope signal is related to the mixer gain and the insertion loss of the low pass filter whilst the phase is the additional function with the 1/2 of the phase delay. For the purpose of the verification of the study, we designed a dynamic frequency divider at 1,400 MHz. The operating frequency range of the device is closely related to the conversion gain of mixers and the amplitude of input signal, and becomes wide as the conversion gain of mixers increases. The designed frequency divider operates between 0.9 GHz and 3.2 GHz, for -14.5 dBm input power. The circuit shows 20 mW power dissipation at V DD =2.5 V, and the simulation result shows that an amplitude modulated signal at 1,400 MHz with the modulation index of 0.9 was successfully downconverted to 700 MHz.

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“…As an important modification to the original concept, a differential common-emitter transimpedance amplifier stage [5] is cascaded with the outputs of the switching quad, whose bias current is set by an extra current mirror. The transimpedance amplifier improves greatly the operational bandwidth due to the generated mismatch within the loop (as demanded by the broadband amplifier theory) and improves the sensitivity as well, due to its additional gain.…”

Section: B Circuit Descriptionmentioning

confidence: 99%

SiGe millimeter-wave dynamic frequency divider with enhanced sensitivity incorporating a transimpedance stage

Chartier¹,

Liu

Fischer

et al. 2007

2007 European Microwave Integrated Circuit Conference

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Abstract-A Si/SiGe bipolar dynamic frequency divider designed for 77GHz/79GHz automotive radar is presented, which uses a transimpedance amplifier topology to improve sensitivity and operational bandwidth. Capable of operation for input frequencies from 25 GHz up to 93 GHz, the divider consumes only 35 mA at 5 V supply voltage and has a very compact die area of 295 x 475 µm 2 . In addition, measurements show that the divider operates in the full radar frequency band (76 GHz-81 GHz) up to a temperature of 100°C.

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SiGe regenerative frequency divider operating up to 63 GHz

Cited by 19 publications

References 4 publications

A Low-Power Wideband Transmitter Front-End Chip for 80 GHz FMCW Radar Systems With Integrated 23 GHz Downconverter VCO

A Low-Power Wideband Transmitter Front-End Chip for 80 GHz FMCW Radar Systems With Integrated 23 GHz Downconverter VCO

Analysis of Input/Output Transfer Characteristic to Transmit Modulated Signals through a Dynamic Frequency Divider

SiGe millimeter-wave dynamic frequency divider with enhanced sensitivity incorporating a transimpedance stage

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