SiGe HBT Nonlinear Phase Noise Modeling

Gribaldo, Sébastien; Bary, L.; Llopis, Olivier

doi:10.1063/1.2759643

Cited by 4 publications

(5 citation statements)

References 6 publications

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“…This implies that it is not possible to distinguish between a stationary or cyclostationary S Inoise just by looking at its low-frequency behavior: one has to look around f 0 , 2f 0 , .... It is then not surprising that some experiments revealed that the low-frequency portion of S Inoise at the input (base) of microwave transistors was found to be insensitive [7] or nearly insensitive [5] to the RF power injected into the device.…”

Section: B S Vnoise From Cyclostationary S Inoisementioning

confidence: 94%

“…Firstly, the choice of the pump frequency. If in one hand the use of a pump frequency much lower than the typical application frequency [1], [3], [4] may seem purposeless, the use of a high frequency pump [5]- [7] not only increases the complexity of the analysis due to the impact of non-linear reactive elements, but also the complete determination of the circuit variables is certainly a bit more difficult and perhaps less accurate.…”

Section: Measurement Conditionsmentioning

confidence: 98%

“…Other authors have tackled the problem using diverse techniques, pump frequencies and instrumentation setups [5]- [7].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

On the cyclostationary properties of the 1/f noise of microwave semiconductor devices

Souza

Nallatamby

Prigent

et al. 2008

2008 IEEE MTT-S International Microwave Symposium Digest

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This paper addresses, from an experimental perspective, the long-standing question on whether the 1/f noise of microwave semiconductor devices should be considered cyclostationary in compact models. By using a simple instrumentation setup and basic mixer concepts, it will be shown that the external equivalent current noise sources of such devices simply CANNOT be stationary. To demonstrate our ideas, a through experimental analysis was carried out on purely-resistive bridge circuits made up of microwave varactors and transistors under large-signal operation whose DC current component is kept constant.When computing the voltage noise power of specific circuit arrangements, errors in excess of 20dB may be induced if the stationary concept is adopted. The difference between the stationary or cyclostationary concepts will be simulated with the aid of the simulator ADS from Agilent.

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Section: B S Vnoise From Cyclostationary S Inoisementioning

confidence: 94%

Section: Measurement Conditionsmentioning

confidence: 98%

See 1 more Smart Citation

On the cyclostationary properties of the 1/f noise of microwave semiconductor devices

Souza

Nallatamby

Prigent

et al. 2008

2008 IEEE MTT-S International Microwave Symposium Digest

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“…A high-frequency pump has been used to study the around-DC behavior of the current fluctuations at the base [14, 15] and at the collector [15] of microwave bipolar transistors. Gribaldo et al [14] and Borgarino et al [15] used transimpedance amplifiers to directly measure the Power Spectral Density (PSD) of the current fluctuations, while pumping the transistor with several power levels of a signal at 3.5 GHz [14] or 4.4 GHz [15]. In those setups, the low and high frequency paths are separated with the aid of Bias Tees.…”

Section: Previous Experimental Initiativesmentioning

confidence: 99%

“…What is more subtle is that when pumping the element by a periodic deterministic signal, the current noise observed around DC should be unaffected as far as the DC deterministic current is kept constant, which has been experimentally observed through the use of transimpedance amplifiers [14, 15]. One may erroneously conclude that the LF noise is not affected by the pump signal, and it should thus be a stationary process.…”

Section: A Brief Note About Conductance Fluctuationsmentioning

confidence: 99%

Experimental characterization of the cyclostationary low-frequency noise of microwave semiconductor devices under large signal operation

Souza

Dupouy²,

Nallatamby³

et al. 2010

Int. j. microw. wirel. technol.

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International audiencehis paper presents a detailed experimental analysis of the cyclostationary properties of low-frequency (LF) noise sources of microwave bipolar devices, in order to improve the LF noise description in compact models. Such models are used to help designers on predicting circuit performances such as phase and amplitude noise in oscillators. We start by reviewing the most relevant experimental and simulation results on the subject, and then investigate the model of conductance fluctuations proposed to explain the 1/f noise of carbon resistors. This simple linear case serves as a basis for understanding the complex case of a non-linear device under large-signal periodic operation. We then present the large-signal small-signal analysis of a pumped junction, focusing on the process of converting the fundamental LF noise process, a current fluctuation, into voltage fluctuations. We show why a stationary noise model would lead to an increase of the voltage noise observed around DC when the device is pumped, while the voltage noise would decrease if a cyclostationary model was used. A great amount of experimental data is presented not only to support our analysis, but also as a mean to distinguish between the two noise processes under consideration: stationary or cyclostationary. The goal of our noise measurement technique was to maximize the difference between those two concepts. Throughout the paper, we revisit some known concepts and show how some experimental results may lead to misinterpretations

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Recent evolutions in low phase noise microwave sources and related problems of noise modeling

Llopis¹,

Gribaldo²,

Chambon³

et al. 2007

AIP Conference Proceedings

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The evolution of spectrally pure microwave sources is described, together with the problem of modeling the spectral shape of these signals. The noise sources interaction with the intrinsic nonlinear behavior of the oscillator is pointed out, and various solutions are proposed. Original techniques are shown to investigate on the phase noise modeling directly at the transistor level. Then, the problem of noise in some new approaches for frequency generation, in which other noise sources than the transistor noise contributes to the oscillator noise, is described.

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SiGe HBT Nonlinear Phase Noise Modeling

Cited by 4 publications

References 6 publications

On the cyclostationary properties of the 1/f noise of microwave semiconductor devices

On the cyclostationary properties of the 1/f noise of microwave semiconductor devices

Experimental characterization of the cyclostationary low-frequency noise of microwave semiconductor devices under large signal operation

Recent evolutions in low phase noise microwave sources and related problems of noise modeling

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