SiGe HBT module with 2.5 ps gate delay

Fox, A.; Heinemann, B.; Barth, R.; Bolze, D.; Drews, Jürgen; Haak, U.; Knoll, D.; Kuck, B.; Kurps, R.; Marschmeyer, S.; Richter, H.; Rücker, H.; Schley, P.; Schmidt, D.; Tillack, Bernd; Weidner, G.; Wipf, Christian; Wolansky, D.; Yamamoto, Yuji

doi:10.1109/iedm.2008.4796799

Cited by 35 publications

(16 citation statements)

References 9 publications

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“…The base is 17.5 nm thick and the Ge content has the form of a box profile with a maximum Ge content of 18%. Basically, it is tried to follow the state-of-the-art doping and Ge profiles shown in [69].…”

Section: Sige Hbtmentioning

confidence: 99%

A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion

Hong

Jungemann

2009

J Comput Electron

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The numerical properties of a deterministic Boltzmann equation solver based on a spherical harmonics expansion of the distribution function are analyzed and improved. A fully coupled discretization scheme of the Boltzmann and Poisson equations is proposed, where stable equations are obtained based on the H-transformation. It is explicitly shown that the resultant Jacobian matrix for the zeroth order component has property M for a first order expansion, which improves the stability even of higher order expansions. The detailed dependence of the free-streaming operator and the scattering operator on the electrostatic potential is exactly considered in the Newton-Raphson scheme. Therefore, convergence enhancement is achieved compared with previous Gummel-type approaches. This scheme is readily applicable to small-signal and noise analysis. As numerical examples, simulation results are shown for a silicon n + nn + structure including a magnetic field, an SOI NMOSFET and a SiGe HBT.

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Section: Sige Hbtmentioning

confidence: 99%

A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion

Hong

Jungemann

2009

J Comput Electron

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“…Although the BE solver can handle the abrupt change of the Ge content without any difficulties, the flanks are slightly graded to avoid problems with the DD and HD models. Note that the base length of state-of-the-art SiGe HBTs is around 20 nm [2]. The Gummel plot is shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Very fast SiGe HBTs with cutoff and maximum oscillation frequencies of more than 300 GHz and gate delays as low as 2.5 ps have been demonstrated in the past [1], [2]. Even faster devices have been investigated by device simulation [3], [4].…”

Section: Introductionmentioning

confidence: 99%

Electron transport in extremely scaled SiGe HBTs

Hong

Jungemann

2009

2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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“…A second architecture explored in the DOTFIVE project is the one proposed in [22]. Although it looks quite different from the G1G architecture at first sight, it is actually a complementary approach.…”

Section: Novel Device Architecturesmentioning

confidence: 98%

Advanced process modules and architectures for half-terahertz SiGe:C HBTs

Decoutere

Huylenbroeck

Heinemann

et al. 2009

2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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The European project DOTFIVE [1] addresses evolutionary scaling of self-aligned selective epitaxial base SiGe:C HBTs, investigates novel SiGe:C HBT architectures, and develops novel process modules to push SiGe BiCMOS towards 500 GHz F max and 2.5 ps gate delay. In this paper, scaling issues of SiGe:C HBT technology will be addressed. The limitations of the different commonly used architectures will be described, and measures taken in the project to overcome these limitations will be summarized. Initial results indicate that the objectives of the project can be reached.

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SiGe HBT module with 2.5 ps gate delay

Cited by 35 publications

References 9 publications

A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion

A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion

Electron transport in extremely scaled SiGe HBTs

Advanced process modules and architectures for half-terahertz SiGe:C HBTs

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