SiGe circuits for high bit-rate optical transmission systems

Wedding, B.; Pohlmann, W.; Schlump, D.; Schlag, E. W.; Ballentin, R.

doi:10.1109/iscas.1999.780785

Cited by 9 publications

(2 citation statements)

References 7 publications

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“…This rf performance will set up a business also for applications up to 20 GHz [12]. The quality of the process was proved by a 40Gbit/s 2:1 MUX using the shrinked version of SiGe1 [13].…”

Section: Rf Power Using Sige1mentioning

confidence: 93%

The Proliferation of Silicon Germanium

Schüppen¹,

Tortschanoff²,

Berntgen³

et al. 2000

30th European Solid-State Device Research Conference

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SiGe has already penetrated into the III/V market by rf IC´s in the 0.9-2.4 GHz range. SiGe technologies have a high reliability, operates also at low voltages and nevertheless it reveals 72% PAE @ GSM frequency, 60% PAE for a 3W DCS power HBT and 50% PAE for CDMA at 1.9GHz. Combined with flip chip technology TEMIC´s SiGe1 process is well suited for rf power systems up to 6 GHz. For higher frequencies and due to performance pressure of pure Si from the bottom of the frequency scale and III/V devices from the top, the next generation: SiGe2 proliferates into III/V area in the 7-20 GHz range. SiGe2 technology includes three types of transistors on the same wafer, having 25, 40 and 70 GHz transit frequencies with 7, 4 and 2.5V BV CE0 corresponding breakdown voltages.

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“…This rf performance will set up a business also for applications up to 20 GHz [12]. The quality of the process was proved by a 40Gbit/s 2:1 MUX using the shrinked version of SiGe1 [13].…”

Section: Rf Power Using Sige1mentioning

confidence: 93%

The Proliferation of Silicon Germanium

Schüppen¹,

Tortschanoff²,

Berntgen³

et al. 2000

30th European Solid-State Device Research Conference

View full text Add to dashboard Cite

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“…In the recent years integrated 10Gb/s signal processing MMIC using SiGe technology have been reported [2][3][4][5]. However no detailed information is provided about the circuit implementations.…”

Section: Equalizer Circuit Designsmentioning

confidence: 99%

Integrated electronic equalizer for dispersion compensation in 10Gb/s fiber networks

Kakani

Dai

Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.

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This paper presents the design of a high-speed transversal equalizer for dispersion compensation in 10Gb/s fiber networks. The five-tap equalizer is implemented in a 47GHz SiGe technology. The equalizer circuit is optimized for minimum group delay and maximum bandwidth. With added feedback in equalizer gain stage, we achieved minimum group delay of 0.7% data period. Polarization mode dispersion compensation has been demonstrated using the proposed transversal equalizer.Index Terms -transversal equalizer, SiGe, high-speed integrated circuits, fiber dispersion.

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