SiGe:C HBT transit time analysis based on hydrodynamic modeling using doping, composition and strained dependent SiGe:C carriers mobility and relaxation time

Ramírez‐García, Eloy; Michaillat, M.; Aniel, F.; Zerounian, N.; Enciso-Aguilar, M.; Rideau, D.

doi:10.1016/j.sse.2011.03.006

“…The junction noise sources take into account electronic thermal noise (eTN) produced at the BE junction. This noise source results from the diffusive nature of electrons as already described in [11] and references therein. eTN is taken into account within the two correlated noise sources i 1 and i 2 (see relations ( 4), ( 8), ( 9) and (10) in [11]).…”

Section: Electric Model For Small-signal and Microwave Noise (Mwn) An...mentioning

confidence: 94%

“…The value of R C is equal to 14.5 Ω (for a device with S E1 ). The method to determine R C is highlighted in [11] for a SiGe HBT with a collector similar to the devices presented in this work.…”

Section: Electric Model For Small-signal and Microwave Noise (Mwn) An...mentioning

confidence: 99%

Germanium content and base doping level influence on extrinsic base resistance and dynamic performances of SiGe:C heterojunction bipolar transistors

Ramírez‐García¹,

Zerounian²,

Aniel³

et al. 2014

Semicond. Sci. Technol.

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We describe a reliable technique to separate the different contributions to the apparent base resistance (R B = R Bx + X R Bi ) of silicon germanium carbon (SiGe:C) heterojunction bipolar transistors (HBTs). The extrinsic base resistance (R Bx ) is quantified using small-signal measurements. The base-collector junction distribution factor (X) and the intrinsic base resistance (R Bi ) are extracted from high frequency noise (MWN) measurements. This method is applied to five different SiGe:C HBTs varying in base doping level and germanium content. The results show that high doping levels improve high frequency noise performances while germanium gradient helps to maintain outstanding dynamic performances. This method could be used to elucidate the base technological configuration that ensures low noise together with remarkable dynamic performances in state-of-the-art SiGe:C HBTs.

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“…The junction noise sources take into account electronic thermal noise (eTN) produced at the BE junction. This noise source results from the diffusive nature of electrons as already described in [11] and references therein. eTN is taken into account within the two correlated noise sources i 1 and i 2 (see relations (4), (8), (9) and (10) in [11]).…”

Section: Electric Model For Small-signal and Microwave Noise (Mwn) Anmentioning

confidence: 94%

“…The value of R C is equal to 14.5 Ω (for a device with S E1 ). The method to determine R C is highlighted in [11] for a SiGe HBT with a collector similar to the devices presented in this work. We used an analytical-based method to extract a part of the small-signal parameters.…”

Section: Electric Model For Small-signal and Microwave Noise (Mwn) Anmentioning

confidence: 99%

“…The noise transport time, τ ( = τ B + τ C , where τ B and τ C are the base and the collector transit times, respectively) was extracted using the approach presented in [11]. This technique is based on hydrodynamic modelling of the HBT to elucidate how the electron transit time is divided into each subsequent region from emitter to collector terminals.…”

Section: Electric Model For Small-signal and Microwave Noise (Mwn) Anmentioning

confidence: 99%

See 1 more Smart Citation

Application of partially coherent modes for studying generation of a Gaussian partially coherent laser beam

Suvorov

¹

2010

Quantum Electron.

0

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We describe a reliable technique to separate the different contributions to the apparent base resistance (R B = R Bx + X R Bi ) of silicon germanium carbon (SiGe:C) heterojunction bipolar transistors (HBTs). The extrinsic base resistance (R Bx ) is quantified using small-signal measurements. The base-collector junction distribution factor (X) and the intrinsic base resistance (R Bi ) are extracted from high frequency noise (MWN) measurements. This method is applied to five different SiGe:C HBTs varying in base doping level and germanium content. The results show that high doping levels improve high frequency noise performances while germanium gradient helps to maintain outstanding dynamic performances. This method could be used to elucidate the base technological configuration that ensures low noise together with remarkable dynamic performances in state-of-the-art SiGe:C HBTs.

show abstract

Experimental and modelling investigation of the influence of noise transit time and self-heating on microwave noise of Si/SiGe:C and InP/InGaAs HBTs

Ramírez‐García

¹

,

Aniel

²

,

Enciso-Aguilar

³

et al. 2012

Semicond. Sci. Technol.

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The results of a comprehensive experimental and modelling investigation of high-frequency noise (HFN) of Si/SiGe:C and InP/InGaAs heterojunction bipolar transistors (HBTs) demonstrate that the key parameters to correctly model HFN for both HBTs are the self-heating (SH) effect at high collector injection levels, i.e. J C > 2-3 mA μm −2 , and the noise transport time (τ ) which must be included at all bias levels. In contrast, thermal noise contribution of the base-emitter junction of the Si/SiGe:C HBT, associated with the diffusive nature of electron transport at this junction because of the lack of conduction band discontinuity, is only important at operation frequencies lying in the frequency range f > f T /2. The noise analysis indicates that in order to correctly model HFN performances at any injection level and operation frequency, τ must be constant with bias and equal to the addition of base and collector transit times (τ B + τ C ). On the other hand, at high J C levels if SH is neglected, then the amplitude of the equivalent noise resistance (R n ) will be the most impacted noise parameter for both HBTs. Concerning the InP/InGaAs HBT, if SH is off at J C = 5.5 mA μm −2 , the minimum noise figure (NF min ) of the InP HBT will be underestimated by 10%.

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SiGe:C HBT transit time analysis based on hydrodynamic modeling using doping, composition and strained dependent SiGe:C carriers mobility and relaxation time

Cited by 6 publications

References 37 publications

Germanium content and base doping level influence on extrinsic base resistance and dynamic performances of SiGe:C heterojunction bipolar transistors

Germanium content and base doping level influence on extrinsic base resistance and dynamic performances of SiGe:C heterojunction bipolar transistors

Application of partially coherent modes for studying generation of a Gaussian partially coherent laser beam

Experimental and modelling investigation of the influence of noise transit time and self-heating on microwave noise of Si/SiGe:C and InP/InGaAs HBTs

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