SiGe BiCMOS 65-GHz BPSK transmitter and 30 to 122 GHz LC-varactor VCOs with up to 21% tuning range

Modeling and extraction of SiGe HBT noise parameters from measured Y-parameters and accounting for noise correlation

“…12). The later is in good agreement with the measured phase noise of 60-GHz SiGe HBT VCOs [1]. 1 0 X T R A C T E D W I T H C O R R E L A T I O N E X T R A C T E D W I T H O U T C O R R E L A T I A T I C = 2 .…”

“…Recent publications on 60-GHz SiGe HBT circuits reported that the measured phase noise of VCOs [1] and noise figure of LNAs [2] are systematically lower than simulated values. At the same time, bipolar transistor models (SGP, HICUM) currently available in simulators do not account for the correlation between the base and collector noise current sources.…”

Analyses and techniques for phase noise reduction in CMOS Colpitts oscillator topology

“…The effectiveness of this technique for oscillators was shown in [19][20][21] where the transistors were biased close to the current density per unit of width for minimum noise figure. From the point of view of the PN analysis, an oscillator can be treated as a low-noise amplifier, needed to be noise matched to the signal source impedance, represented in this case by the tank impedance at the resonance frequency [18]. In low-noise amplifiers, the transistors should be biased with the optimum current density for minimum noise figure [17].…”

“…This technique of the optimum bias current density applied to specific metrics of interest has been extensively used for the design of low-noise amplifiers with minimum noise figure and the design of power amplifiers with a maximum linearity range [17,18]. In a few cases, it has been also mentioned in achieving low PN in differential Colpitts and commonsource cross-coupled differential pair oscillators [19][20][21]. Here, it will be applied to a single-ended Figure 1.…”

SiGe BiCMOS for Analog, High-Speed Digital and Millimetre-Wave Applications Beyond 50 GHz

“…The transmitter has an image-reject architecture with stagger-tuned, two-stage, lumped poly-phase filters at 5 GHz and at 65 GHz. All three ICs include for the first time a low-phase-noise 60-GHz VCO with 10% tuning range [34] and rely on inductors and transformers to minimize die area. The VCO, downconvert mixer, LNA, and power amplifier employ SiGe HBT cascodes with inductive degeneration to improve isolation and simplify interstage matching.…”