SiGe-based Re-engineering of Electronic Warfare Subsystems

Abstract

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High temperature gas sensing performances of silicon carbide nanosheets with an n–p conductivity transition

“…As a third-generation wide band gap semiconductor, silicon carbide (SiC) has emerged abundant interests because of its excellent chemical inertness and good capability with existing silicon-based electro devices. [15][16][17] Besides, SiC has been proven as a qualied candidate for the application in extreme condition, 18,19 and its high charge transport rate makes it possible to fabricate gas sensors with short response/recovery time. 20 Soo et al demonstrated that SiC material is the best candidate for some particular situations (chemical synthesis, vapor-turbine tests, etc.)…”

A Novel Silicon Carbide Nanosheet for High‐Performance Humidity Sensor

“…Silicon carbide (SiC), as one of the most representative wide band gap semiconductors (2.39 eV for 3C‐SiC), has raised substantial attention because of its superior properties, including high mechanical strength, chemical inertness, and good thermal stability . Because of these unique features, SiC possesses the potential for applying in harsh environment (corrosion environment, oxidizing atmosphere, high‐temperature, etc) . Particularly, SiC also has the ability to transfer charge carriers rapidly owing to its high electron mobility .…”