Side wall water outlet design for silicon wafer wet cleaning bath

Matsuo, Miya; Takahashi, Tomoko; Habuka, Hitoshi; Gotō, Akira

doi:10.1016/j.mssp.2020.104970

Cited by 2 publications

(4 citation statements)

References 19 publications

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“…2b, was the same as that reported in a previous study. 14 For Type-B, the distance between the right and left pinholes was 1.5 and 3 cm. The pinhole arrays were set at the depth of 2, 3 and 5 cm from the top of the bath wall.…”

Section: Experimental Procedures and Numerical Calculationsmentioning

confidence: 98%

“…The water flow rate was mainly 17 l min −1 , similar to the previous studies. [12][13][14] For studying the appropriate water flow rate, rates between 5 and 30 l min −1 were evaluated. A blue-colored ink was used as a tracer for visualizing the water motion, which was captured using a video camera from the front and right sides.…”

Section: Experimental Procedures and Numerical Calculationsmentioning

confidence: 99%

“…Because the water flow having the six wafers placed at the bath bottom has been evaluated in a previous study, 14 the wafer operation was additionally taken into account in this study. The wafer position during the intermediate process to dip the wafers into the bath might have a significant influence on the water flow near the water surface.…”

Section: Experimental Procedures and Numerical Calculationsmentioning

confidence: 99%

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Water Flow Improvement by Pinhole Outlet in Batch-Type Wet Cleaning Bath for Large-Diameter Wafers

Tsuchida

Takahashi

Habuka

et al. 2022

ECS J. Solid State Sci. Technol.

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The pinhole water outlet fabricated near the top of bath walls could produce a simple water flow with less water recirculation in the batch-type wet cleaner for 300-mm-diameter silicon wafers. The pinholes having a 2-mm diameter were arranged in three different configurations: (i) the right and left side walls have the pinhole outlets, while the front and back side walls did not, (ii) the distance between the nearest neighbor pinholes was less than 1.5 cm and (iii) the pinhole arrays were at the depth of 3, 4.5 and 6 cm beneath the water surface. The water motion was studied by computational fluid dynamics and visualization, during the wafer operations. When 10 cm of the wafer bottom was immersed in the water, the calculation showed that 90% of the particles, released from the 1-cm depth beneath the water surface, was removed from the bath within 10 seconds. By observations throughout the sequential wafer operations of dipping, holding and lifting, the blue-colored tracer ink that had been painted at the wafer surface simply went toward the outlet without any considerable recirculation. The range of the water flow rate without causing any recirculation was additionally studied.

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Section: Experimental Procedures and Numerical Calculationsmentioning

confidence: 98%

Section: Experimental Procedures and Numerical Calculationsmentioning

confidence: 99%

Section: Experimental Procedures and Numerical Calculationsmentioning

confidence: 99%

See 1 more Smart Citation

Water Flow Improvement by Pinhole Outlet in Batch-Type Wet Cleaning Bath for Large-Diameter Wafers

Tsuchida

Takahashi

Habuka

et al. 2022

ECS J. Solid State Sci. Technol.

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“…RCA cleaning is mainly used as a wafer cleaning process [7,8]. however, RCA cleaning has problems such as readsorption of metal impurities, etching of wafer surface due to strong acid, shortening of bath life and high temperature required [9].…”

Section: Introductionmentioning

confidence: 99%

Archives of Metallurgy and Materials

Ryu,

Kim,

Roh

et al. 2021

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Dissolution Behavior of Metal iMpurities anD iMproveMent of reclaiMeD seMiconDuctor Wafer cleaning By aDDition of chelating agentAs a wafer cleaning process, RCA (Radio Corporation of America) cleaning is mainly used. however, RCA cleaning has problems such as instability of bath life, re-adsorption of impurities and high-temperature cleaning. herein, we tried to improve the purity of silicon wafers by using a chelating agent (oxalic acid) to solve these problems. Compounds produced by the reaction between the cleaning solution and each metal powder were identified by referring to the pourbaix diagram. All metals exhibited a particle size distribution of 10 μm or more before reaction, but a particle size distribution of 500 nm or less after reaction. In addition, it was confirmed that the metals before and after the reaction showed different absorbances. As a result of elemental analysis on the surface of the reclaimed silicon wafer cleaned through such a cleaning solution, it was confirmed that no secondary phase was detected other than si.

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Side wall water outlet design for silicon wafer wet cleaning bath

Cited by 2 publications

References 19 publications

Water Flow Improvement by Pinhole Outlet in Batch-Type Wet Cleaning Bath for Large-Diameter Wafers

Water Flow Improvement by Pinhole Outlet in Batch-Type Wet Cleaning Bath for Large-Diameter Wafers

Archives of Metallurgy and Materials

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