Side effects in InAlN/GaN high electron mobility transistors

Kourdi, Z.; Bouazza, B.; Guen-Bouazza, A.; Khaouani, M.

doi:10.1016/j.mee.2015.07.003

Cited by 8 publications

(4 citation statements)

References 25 publications

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“…Interestingly, the thermally annealed sample showed kinks in drain current near V g ≈ −2 V and −3 V. Along with the significant increase in the leakage current, the data suggests the generation of additional traps in the GaN buffer or AlGaN barrier layer. 38,39 To obtain insights into the structural/crystal quality differences between the EWF and thermal annealing, we performed micro-Raman spectroscopy. Measurements were taken in a backscattering configuration with unpolarized detection, enabling the A 1 (LO) and E 2 (high) phonon modes of GaN to be measured simultaneously.…”

Section: Discussionmentioning

confidence: 99%

Non-Thermal Annealing of Gamma Irradiated GaN HEMTs with Electron Wind Force

Rasel

Stepanoff²,

Haque³

et al. 2022

ECS J. Solid State Sci. Technol.

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Radiation damage mitigation in electronics remains a challenge because the only established technique, thermal annealing, does not guarantee a favorable outcome. In this study, a non-thermal annealing technique is presented, where electron momentum from very short duration and high current density pulses is used to target and mobilize the defects. The technique is demonstrated on 60Co gamma irradiated (5 x 106 rad dose and 180 x 103 rad/hr dose rate) GaN high electron mobility transistors. The saturation current and maximum transconductance were fully and threshold voltage was partially recovered at 30°C or less. In comparison, thermal annealing at 300°C mostly worsened the post-irradiation characteristics. Raman spectroscopy showed an increase in defects that reduce the 2-dimensional electron gas (2DEG) concentration and increase the carrier scattering. Because the electron momentum force is not applicable to the polymeric surface passivation, the proposed technique could not recover the gate leakage current, but performed better than thermal annealing. The findings of this study may benefit the mitigation of some forms of radiation damage in electronics that are difficult to achieve with thermal annealing.

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Section: Discussionmentioning

confidence: 99%

Non-Thermal Annealing of Gamma Irradiated GaN HEMTs with Electron Wind Force

Rasel

Stepanoff²,

Haque³

et al. 2022

ECS J. Solid State Sci. Technol.

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“…The Gold (Au) is used for Ohmic source/drains contacts and Schottky gates contacts electrodes. The Al 2 O 3 gate oxide is adopted to avoid conventional oxide's drawbacks, such as the high density of shallow traps and surface leakage at the device/backup bulk interface [13,14].…”

Section: Device Structurementioning

confidence: 99%

Improved performance HEMT device with backup bulk for LNA application

2023

Self Cite

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In this study, a 30 nm gate length double-gate InAlN/GaN on 4h-SiC substrate high-electron-mobility transistor is proposed. Different electrical characteristics such as DC, AC, capacity and noise analysis was performed through TCAD device simulations. The proposed device exhibited maximum drain current of 2.15 A/mm, transconductance of 1308 mS/mm, (350/ 610) GHz of FT/FMAX and maximum noise figure of NFMax=9.5 dB at 1 THz. Thus, the low noise high electron mobility transistor (LNA-HEMT) amplifier has been designed considering main characteristics of power with new structure, in terms of temperature and low noise figure effect. Adopting the backup bulk in the optimization procedure the proposed device obtained an outstanding performance with appropriate low power consumption for GEO satellite application

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“…The conventional HEMTs demonstrate the off-state breakdown voltages of a 180 V and 875 V. Growth of the AlN layer was particularly crucial indicated in that the breakdown characteristic of the HEMT device with this layer has been significantly improved in this device as well as their resistivity [33]. It is believed that enhancement of the off-state breakdown voltage of the HEMT device is attributed to a better carrier confinement and the increased back-barrier height of the AlN buffer layer used suppresses the spillover of the At a certain drain current level value with increasing a channel pinch-off effect, and the punch through of the electrons into the buffer layer causes a rapid increase of the drain leakage current the punch through of the HEMT device breakdown be occurs [34], [35] and is known as the buffer-layer punch through effect [36], such as 200 mA/mm in VGS=-4 V for example. As mentioned above, the electrons spilling over from the channel to the buffer layer at a higher drain supply voltage can from the buffer leakage current.…”

Section: Breakdown Voltagementioning

confidence: 99%

A modeling and performance of the triple field plate HEMT

Kourdi¹,

Hamdoun²

2019

IJPEDS

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We present this work by two steps. In the first one, the new structure proposed of the FP-HEMTs device (Field plate High Electron Mobility Transistor) with a T-gate on an 4H-SIC substrate to optimize these electrical performances, multiple field-plates were used with aluminum oxide to split the single electric field peak into several smaller peaks, and as passivation works to reduce scaling leakage current. In the next, we include a modeling of a simulation in the Tcad-Silvaco Software for realizing the study of the influence of negative voltage applied to gate T-shaped in OFF state time and high power with ambient temperature, the performance differences between the 3FP and the SFP devices are discussed in detail.

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Side effects in InAlN/GaN high electron mobility transistors

Cited by 8 publications

References 25 publications

Non-Thermal Annealing of Gamma Irradiated GaN HEMTs with Electron Wind Force

Non-Thermal Annealing of Gamma Irradiated GaN HEMTs with Electron Wind Force

Improved performance HEMT device with backup bulk for LNA application

A modeling and performance of the triple field plate HEMT

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