In this study, we
synthesized 5,11-dihexyl-4,4,10,10-tetraoctylbenzo[1,2-b:4,5-b′]bisthieno[4″,5″-b″:4‴,5‴-b‴]silolo[2″,3″-d:2‴,3‴-d′]thiophene
(ArSi) as a ladder-type electron-rich core for the preparation of
three acceptor–donor–acceptor-type nonfullerene acceptors
(NFAs)ArSiID, ArSiID-F, and ArSiID-Clfeaturing (3-oxo-2,3-dihydro-1H-inden-1-ylidene)malononitrile (ID), 2-(5,6-difluoro-3-oxo-2,3-dihydro-1H-inden-1-ylidene)malononitrile (ID-F), and 2-(5,6-dichloro-3-oxo-2,3-dihydro-1H-inden-1-ylidene)malononitrile (ID-Cl) as peripheral electron-poor
units, respectively. These molecules exhibit strong absorption covering
the region of 600–850 nm. The incorporation of the halogen
atoms onto the terminal units adjusted the energy levels and light-harvesting
ability of these materials. We employed the conjugated polymers J51 and PBDB-T, having middle optical energy
gaps as donor together with these ArSi derivatives as acceptor
to study the blend film morphology and the corresponding organic photovoltaic
(OPV) performances. After optimization with device engineering works,
a PBDB-T:ArSiID-F-based device with a power conversion
efficiency up to 9.4% was achieved. This study is the first case to
examine the effects of various halogen modifications on the performance
of ArSi derivatives that serve as NFAs for OPVs. Our findings
should encourage further investigations on this rarely studied core
structure for optoelectronic applications.