2022
DOI: 10.1016/j.nanoen.2022.107985
|View full text |Cite
|
Sign up to set email alerts
|

Side chain engineering enhances the high-temperature resilience and ambient stability of organic synaptic transistors for neuromorphic applications

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
12
0

Year Published

2023
2023
2023
2023

Publication Types

Select...
6

Relationship

4
2

Authors

Journals

citations
Cited by 17 publications
(14 citation statements)
references
References 55 publications
0
12
0
Order By: Relevance
“…Number-average ( M n ) and weight-average ( M w ) molecular weights were performed following the previously published procedure …”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…Number-average ( M n ) and weight-average ( M w ) molecular weights were performed following the previously published procedure …”
Section: Methodsmentioning
confidence: 99%
“…Number-average (M n ) and weight-average (M w ) molecular weights were performed following the previously published procedure. 39 UV−Vis−NIR Absorption Spectroscopy. UV−Vis−NIR absorption spectra were obtained according to the published procedure.…”
Section: Chemistry Of Materialsmentioning
confidence: 99%
“…Up to now, much attention has been paid to the development of high-temperature-resilient/stable iontronic neural devices through utilizing temperature-stable materials. [117,164,[265][266][267] For example, a robust 2D materials-based iontronic memristor (graphene/MoS2-xOx/graphene) have demonstrated reliable resistance switching at temperature up to 340 °C; [164] (semi)conductive polymer combined with a thermal stable iongel electrolyte enables solid-state iontronic neural transistors to operate stably at a temperature above 90 °C. [259,267] However, the low-temperature device stability, humidity stability, long-term storage stability, and operation (cyclic) stability of iontronic neural devices, especially iontronic neuromorphic sensing devices, have been largely ignored.…”
Section: Conclusion and Prospectsmentioning
confidence: 99%
“…[117,164,[265][266][267] For example, a robust 2D materials-based iontronic memristor (graphene/MoS2-xOx/graphene) have demonstrated reliable resistance switching at temperature up to 340 °C; [164] (semi)conductive polymer combined with a thermal stable iongel electrolyte enables solid-state iontronic neural transistors to operate stably at a temperature above 90 °C. [259,267] However, the low-temperature device stability, humidity stability, long-term storage stability, and operation (cyclic) stability of iontronic neural devices, especially iontronic neuromorphic sensing devices, have been largely ignored. Future studies should pay more attention to device stability issues; 6) Gain a deeper understanding of the biological nervous system, which can be achieved through collaboration with neuroscientists; 7) Based on the above research, further expand the functions of NSC devices according to the requirements of practical application scenarios.…”
Section: Conclusion and Prospectsmentioning
confidence: 99%
“…This fantastic ion-to-current transducing feature appears particularly attractive for chemical and biological sensors, and neuromorphic engineering. [17][18][19][20][21][22][23] In addition, the OECT based on solid or gel electrolytes is also highly sought after as it broadens its application scope and shows promise as flexible and wearable electronics. [24][25][26][27][28] In order to realize a high-transconductance OECT, the organic semiconductor channel layer is supposed to have a combination of high charge carrier mobility, preferably with a densely packed crystalline film morphology, and high charge storage capacity that largely depends on facile ion diffusion into the channel.…”
Section: Introductionmentioning
confidence: 99%