Side-by-side observation of the interfacial improvement of vertical graphene-coated silicon nanocone anodes for lithium-ion batteries by patterning technology

Wang, Chao; Luo, Fengguang; Lü, Hao; Liu, Bonan; Geng, Chao; Quan, Baogang; Li, Junjie; Li, Hong; Chen, Liquan

doi:10.1039/c7nr04041e

Cited by 16 publications

(14 citation statements)

References 40 publications

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“…Though the CVD-graphene has already been integrated with Si materials to fabricate high performance electrochemical devices such as supercapacitors and LIBs, [96,97] it can be integrated with nanocone textured-Si to fabricate CVD-graphene/textured-Si based anodes for high performance LIBs. [98] In this work, the silicon nanocone (SNC) electrode was prepared by directly etching the Si substrate via ICP-RIE process. The O 2 and SF 6 were used as etching gases, and the aspect ratios of the SNCs could easily be altered by varying gas flow ratio, plasma power, etc.…”

Section: Fabrication Of Cvd-graphene/textured-si Heterostructures For Electrochemical and Photoelectrochemical Energy Devicesmentioning

confidence: 99%

CVD Graphene on Textured Silicon: An Emerging Technologically Versatile Heterostructure for Energy and Detection Applications

Khan

Kumar

Cong

et al. 2021

Adv Materials Inter

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Integration of chemical vapor deposited (CVD) graphene with textured‐Si substrates is an emerging research area wide open. Graphene can serve as both a transparent top electrode and a charge‐separating/transport‐active layer. However, its low light absorption capability, and high reflectance of planar‐Si substrate are major concerns for light harvesting required for photovoltaic devices especially solar cells and photodetectors (PDs). Therefore, CVD‐graphene/textured‐Si heterostructure effectively addresses this problem as the textured‐Si provides more surface area for light harvesting by suppressing light reflection and enables the efficient charge separation/transport as well. Recently, CVD‐graphene/textured‐Si Schottky junction based high performance solar cells and PDs have successfully been demonstrated. Moreover, the graphene coating on textured‐Si enhances the conductivity of Si anodes and provides structural stability for lithium‐ion batteries (LIBs). Furthermore, the optoelectronic coupled interfacial properties in such heterostructures suitably construct the platforms for surface enhanced Raman scattering (SERS) based detection and photocathodes for H2‐production, respectively. Hence, in this review, the fabrication of various CVD‐graphene/textured‐Si heterostructures and their applications in solar cells, PDs, SERS, LIBs, and H2‐production are critically analyzed with respect to the synergistic effect of Si‐texturing, electronic/optoelectronic properties of CVD‐graphene, etc. Finally, conclusions and outlook of this rapidly emerging and technologically broad research area are presented.

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Section: Fabrication Of Cvd-graphene/textured-si Heterostructures For Electrochemical and Photoelectrochemical Energy Devicesmentioning

confidence: 99%

CVD Graphene on Textured Silicon: An Emerging Technologically Versatile Heterostructure for Energy and Detection Applications

Khan

Kumar

Cong

et al. 2021

Adv Materials Inter

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“…Li et al110 and Wang et al111 reported the direct growth of VG on Si nanocones (SNCs) with the help of hot‐filament CVD (HFCVD) system for field emission and electrochemical applications, respectively. The SNC electrode was fabricated by an inductively coupled plasma (ICP) reactive ion etching system.…”

Section: Catalyst‐free Direct Cvd Growth Of Graphene On Technologicalmentioning

confidence: 99%

“…h) Raman spectra and i) energy dispersive X‐Ray (EDX) element weight ratios of the SNC electrode and the SNC‐G electrode. Reproduced with permission 111. Copyright 2017, the Royal Society of Chemistry.…”

Section: Catalyst‐free Direct Cvd Growth Of Graphene On Technologicalmentioning

confidence: 99%

“…Instead of using flat Si surfaces for the metal‐catalyst free direct CVD growth of graphene, researchers have used textured Si substrates to grow graphene . Li et al and Wang et al reported the direct growth of VG on Si nanocones (SNCs) with the help of hot‐filament CVD (HFCVD) system for field emission and electrochemical applications, respectively. The SNC electrode was fabricated by an inductively coupled plasma (ICP) reactive ion etching system.…”

Section: Catalyst‐free Direct Cvd Growth Of Graphene On Technologicalmentioning

confidence: 99%

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Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates

et al. 2018

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To fabricate graphene based electronic and optoelectronic devices, it is highly desirable to develop a variety of metal‐catalyst free chemical vapor deposition (CVD) techniques for direct synthesis of graphene on dielectric and semiconducting substrates. This will help to avoid metallic impurities, high costs, time consuming processes, and defect‐inducing graphene transfer processes. Direct CVD growth of graphene on dielectric substrates is usually difficult to accomplish due to their low surface energy. However, a low‐temperature plasma enhanced CVD technique could help to solve this problem. Here, the recent progress of metal‐catalyst free direct CVD growth of graphene on technologically important dielectric (SiO2, ZrO2, HfO2, h‐BN, Al2O3, Si3N4, quartz, MgO, SrTiO3, TiO2, etc.) and semiconducting (Si, Ge, GaN, and SiC) substrates is reviewed. High and low temperature direct CVD growth of graphene on these substrates including growth mechanism and morphology is discussed. Detailed discussions are also presented for Si and Ge substrates, which are necessary for next generation graphene/Si/Ge based hybrid electronic devices. Finally, the technology development of the metal‐catalyst free direct CVD growth of graphene on these substrates is concluded, with future outlooks.

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“…The capacity has reached 95μAh/cm 2 and maintained 1400 cycles. The reversible capacity and cycle life have been improved [10] .…”

Section: Introductionmentioning

confidence: 99%

Study of Micro-Silicon Particles Covered by Graphene

Yu¹,

Zhang

2021

ssr

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Lithium-ion batteries have become a new hot spot in battery research due to their high-energy density, environmental friendliness, and multiple charge/discharge times. Silicon-based materials have become the best choice of anode materials for lithium-ion batteries due to their advantages of low lithium insertion voltage, high specific theoretical capacity, and large reserves on the planet. However, the silicon-based material has a large volume expansion (about 300%) during cycling, which causes the active silicon to fall off from the surface of the conducting material. This expansion will also break the solid electrolyte interphase (SEI) on the surface of the silicon electrode, and will consume additional Li+, causing the battery’s capacity to drop rapidly as the times of circulation increases. In addition, the conductivity of silicon-based materials is lower than that of graphite anode, which have already been used commercially, led to the worse performance of the silicon anode. These drawbacks force silicon-based anode materials to encounter huge resistance in the commercialization process. Therefore, research on the improvement of performance of the silicon-based anode materials is of great significance.

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Side-by-side observation of the interfacial improvement of vertical graphene-coated silicon nanocone anodes for lithium-ion batteries by patterning technology

Cited by 16 publications

References 40 publications

CVD Graphene on Textured Silicon: An Emerging Technologically Versatile Heterostructure for Energy and Detection Applications

CVD Graphene on Textured Silicon: An Emerging Technologically Versatile Heterostructure for Energy and Detection Applications

Direct CVD Growth of Graphene on Technologically Important Dielectric and Semiconducting Substrates

Study of Micro-Silicon Particles Covered by Graphene

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