2014 16th European Conference on Power Electronics and Applications 2014
DOI: 10.1109/epe.2014.6910826
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SiC single switch resonant inverters performance dependence on induction load

Abstract: In this paper, a comparison between several induction loads operating in a One Switch -Zero Voltage Switching (1SW-ZVS) resonant converter is presented. The aim is to determine the optimal load for induction cooking systems from the point of view of maximizing the performance of a given active device (Si IGBT or SiC JFET) in this resonant topology.

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Cited by 5 publications
(4 citation statements)
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“…Refs. [14][15][16] apply SiC power switches to single-switch resonant converters. WBG devices enable us to configure induction cooktops in different ways, which are hard to design with Si-based power semiconductors.…”
Section: Introductionmentioning
confidence: 99%
“…Refs. [14][15][16] apply SiC power switches to single-switch resonant converters. WBG devices enable us to configure induction cooktops in different ways, which are hard to design with Si-based power semiconductors.…”
Section: Introductionmentioning
confidence: 99%
“…Based on the power conversion stages, the IH converter topologies are classified into two types, namely dual-stage power conversion (AC-DC-AC) and single-stage power conversion (AC-AC). The most commonly used two-stage topologies are single-switch (SS) resonant inverters [13][14][15][16] half-bridge (HB) inverter [17][18][19][20][21] and full-bridge (FB) inverter. [22][23][24][25][26] These topologies are used to feed power, either to single or multi-loads, with additional modifications.…”
Section: Introductionmentioning
confidence: 99%
“…There are several reports on evaluation of HF IH converters using SiC power devices, particularly, HF inverters [7][8][9][10][11]; however, we are not aware of any study cases or academic papers verifying soft-switching techniques, especially ZVS, using all-SiC power modules with regard to SiC-MOSFET characteristics. In this context, it is important to experimentally verify all-SiC power modules, combining high withstand voltage, low on-resistance, and zero tail current, as an alternative to Si-IGBT power devices (modules or discrete components), being currently the mainstream in home and professional high-frequency (HF) IH applications.…”
Section: Introductionmentioning
confidence: 99%
“…In this context, it is important to experimentally verify all-SiC power modules, combining high withstand voltage, low on-resistance, and zero tail current, as an alternative to Si-IGBT power devices (modules or discrete components), being currently the mainstream in home and professional high-frequency (HF) IH applications. There are several reports on evaluation of HF IH converters using SiC power devices, particularly, HF inverters [7][8][9][10][11]; however, we are not aware of any study cases or academic papers verifying soft-switching techniques, especially ZVS, using all-SiC power modules with regard to SiC-MOSFET characteristics.…”
Section: Introductionmentioning
confidence: 99%