SiC single crystal growth by a modified physical vapor transport technique

Evolution and stability of basal plane dislocations during bulk growth of highly n‐type doped versus highly p‐type doped 6H‐SiC

“…The investigation on basal plane dislocations occurrence in SiC was carried out on a number of highly ntype doped and highly p-type doped 6H-SiC samples grown in our lab using the Modified-Physical Va-por Transport method (M-PVT) [5,6]. This method allows a relatively uniform dopant supply to the SiC growth interface and hence a relatively homogeneous axial dopant incorporation.…”

Bulk growth of SiC – review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution

“…Crystal growth was carried out using the PVT [29] and M-PVT methods [1][2][3][4][5]30]. We performed several growth runs; the input parameters of interest during growth (growth temperature and doping) were altered in each run in such a way as to precisely compare dislocation evolution and dynamics with respect to them.…”

“…dislocation dynamics, during SiC bulk crystal growth. Much of the work was carried out using a modified physical vapor transport (M-PVT) setup that uses an extra gas pipe for feeding of a small amount of additional gases into the growth cell [1][2][3][4][5]. With this technique, for the first time, p-type aluminum doping of SiC was realized with resistivities of as low as 0.1 Ω cm .…”

Step-Flow Growth of Fluorescent 4H-SiC Layers on 4 Degree Off-Axis Substrates

“…The doped sources with nitrogen and boron concentrations in the 10 18 cm -3 range were prepared by physical vapor transport (PVT) growth [3]. Sublimation epitaxy [4] employing doped and undoped sources was performed in different ambient from dynamic vacuum (i.e.…”