SiC power MOSFETs performance, robustness and technology maturity

Abstract

Relatively recently, SiC power MOSFETs have transitioned from being a research exercise to becoming an industrial reality. The potential benefits that can be drawn from this technology in the electrical energy conversion domain have been amply discussed and partly demonstrated. Before their widespread use in the field, the transistors need to be thoroughly investigated and later validated for robustness and longer term stability and reliability. This paper proposes a review of commercial SiC power MOSFETs state-of-the-art characteristics and discusses trends and needs for further technology improvements, as well as device design and engineering advancements to meet the increasing demands of power electronics.

Body diode reliability investigation of SiC power MOSFETs

“…Results in Fig. 9, can be best understood when reference is made to results already presented about the avalanche capability and unclamped inductive switching (UIS) performance of the devices, in particular the interpretation given about the Dev_B devices having a higher breakdown voltage (i.e., probably lower values of electric field in the drift region) than their Dev_A counterparts [7].…”

Transient out-of-SOA robustness of SiC power MOSFETs

“…Here, too, no evidence of parasitic BJT activation is however observed. In simulation, too, as the value of VDS is increased further, the device goes straight into a catastrophic failure mode, characterized by reverse hole current induced thermal runaway [6].…”

“…17, for the case of constant VGS applied. Operation under such bias conditions is associated with uneven current and power distribution within the chip, current crowding and hot-spot formation [6,9], resulting in a very stressful effectively out-of-SOA operational mode. Failure to the achievement of a highly localized excessive temperature.…”

“…19 [6,9,10]. In relation to SiC devices, it is interesting to note that the ID range of thermally unstable behavior decreases with increasing temperature [6,9,12].…”

“…19 [6,9,10]. In relation to SiC devices, it is interesting to note that the ID range of thermally unstable behavior decreases with increasing temperature [6,9,12]. In view of the small die sizes and relatively high thermal conductivity of SiC, together with its high temperature withstand capability, the technology offers the potential to design devices which are robust as current limiters in transient operation.…”