SiC power devices with low on-resistance for fast switching applications

Friedrichs, Peter; Mitlehner, H.; Dohnke, Karl Otto; Peters, Dethard; Schörner, Reinhold; Weinert, Ulrich; Baudelot, E.; Stephani, D.

doi:10.1109/ispsd.2000.856809

Cited by 39 publications

(19 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Thus, for this type of SiC-JFET R ON,sp of a 600V device is about 60% of the value of a 1200V device. For another type of SiC-JFET where there is no lateral channel, by using the given doping concentration and thickness of both the drift region and device vertical channel in [9], it is found that R ON,sp of a 600V device could decrease by a factor of 2 than that of a 1200V device.…”

Section: A Conduction Loss Comparisonmentioning

confidence: 99%

SiC/GaN Power Semiconductor Devices Theoretical Comparison and Experimental Evaluation

Evans

Johnson

2016

2016 IEEE Vehicle Power and Propulsion Conference (VPPC)

View full text Add to dashboard Cite

Abstract-SiC and GaN power transistors conduction loss and switching losses are compared in this paper. In order to compare performance of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses change when device maximal blocking voltage reduces by half. Then static and dynamic characteristics of commercial SiC and GaN power transistors are compared and it is shown that GaN-HEMT would still have smaller ON-state resistance and inter-electrode capacitance in comparison with a 600V SiC device. After that, switching losses Esw of a GaN-HEMT is measured and compared with that of a 1200V SiC-JFET and a 600V SiC-MOSFET, in which it is shown that Esw of a GaN-HEMT is smaller than a SiC power transistor with the same power rating.

show abstract

Section: A Conduction Loss Comparisonmentioning

confidence: 99%

SiC/GaN Power Semiconductor Devices Theoretical Comparison and Experimental Evaluation

Evans

Johnson

2016

2016 IEEE Vehicle Power and Propulsion Conference (VPPC)

View full text Add to dashboard Cite

show abstract

“…Si Si 4H-SiC MOSFET 10 cm 2 /Vs (2) (4) (6) SiC SIAFET (7) (8) SEMOSFET (9) SiC JFET (10) (11) JFET SEJFET Static Expansion channel JFET (12) (13) 2. …”

Section: Simentioning

confidence: 99%

Electric characteristics of normally-off type 5 kV class 4H-SiC JFET, "SEJEET"

et al. 2005

View full text Add to dashboard Cite

A normally-off type 5.3 kV 4H-SiC JFET with low specific on-resistance, called SEJFET (Static Expansion channel JFET), has been fabricated. Its normally-off operation was realized by a thin regrown epitaxial channel layer and using the buried p+ regions as a gate in addition to the top p+ regions. The achieved blocking voltage is the highest class BV among the reported SiC JFET. In a 5.3 kV 4H-SiC SEJFET, the lowest specific on resistance of 69 mΩcm 2 .Furthermore, the highest current capability among SiC JFET of 3.3 A is achieved. In all reported FETs, the SEJFET has the best trade-off between RonS and blocking voltage (BV), which is about 1/230 th lower than theoretical limit of a Si FET. Furthermore, the figure of merit (BV 2 /RonS) is 407 MW/cm 2 , and this value is the highest among reported normally off SiC FETs.SiC JFET SEJFET

show abstract

“…It is predicted to replace silicon (Si) in high voltage semiconductor devices and in high frequency applications due to its high breakdown voltage [1], its lower specific on-resistance (Ron) [2], as also its ability to operate in high temperature [3,4].…”

Section: Introductionmentioning

confidence: 99%

The DC behavioural electrothermal model of silicon carbide power MOSFETs under SPICE

Lakrim¹,

Tahri²

2015

2015 IEEE International Conference on Industrial Technology (ICIT)

View full text Add to dashboard Cite

This paper presents a new behavioural electrothermal model of power Silicon Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) under SPICE. This model is based on the MOSFET model level 1of SPICE, in which phenomena such as Drain Leakage Current I DSS , On-State Resistance R DSon , gate Threshold voltage V GSth , the transconductance (gfs), I-V Characteristics Body diode, temperature-dependent and self-heating are included and represented using behavioural blocks ABM (Analog Behavioural Models) of Spice library. This ultimately makes this model flexible and easily can be integrated into the various Spice -based simulation softwares. The internal junction temperature of the component is calculated on the basis of the thermal model through the electric power dissipated inside and its thermal impedance in the form of the localized Foster canonical network. The model parameters are extracted from manufacturers' data (curves data sheets) using polynomial interpolation with the method of simulated annealing (S A) and weighted least squares (WLS). This model takes into account the various important phenomena within transistor. The effectiveness of the presented model has been verified by Spice simulation results and as well as by data measurement for SiC MOSFET transistor C2M0025120D CREE (1200V, 90A).

show abstract

SiC power devices with low on-resistance for fast switching applications

Cited by 39 publications

References 13 publications

SiC/GaN Power Semiconductor Devices Theoretical Comparison and Experimental Evaluation

SiC/GaN Power Semiconductor Devices Theoretical Comparison and Experimental Evaluation

Electric characteristics of normally-off type 5 kV class 4H-SiC JFET, "SEJEET"

The DC behavioural electrothermal model of silicon carbide power MOSFETs under SPICE

Contact Info

Product

Resources

About