SiC MOSFET Switching Waveform Profiling Through Passive Networks

Walder, Sam; Yuan, Xibo; Yan, Qingzeng

doi:10.1109/iecon.2018.8591679

Cited by 4 publications

(2 citation statements)

References 19 publications

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“…Finally, the gate source voltage ( V gs ) is the only way to control the MOSFET on‐off state. However, during the turn‐on transient of the MOSFET, the drive current charges the input capacitor of the SiC MOSFET, in principle, the increase in the gate current becomes relatively slow due to the L g , which delays the gate charge time [69]. In other words, the L g limits the maximum switching speed of the module.…”

Section: Gate Loop Parasitic Inductancementioning

confidence: 99%

Review of the designs in low inductance SiC half‐bridge packaging

Yang

et al. 2022

IET Power Electronics

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Silicon carbide (SiC) device has become the primary choice for high-efficiency power electronic equipment due to its excellent performance. However, its higher switching frequency and faster switching speed have also incurred new challenges, such as low parasitic inductance packaging. Despite a significant amount of literature to overview the low parasitic inductance packages, most of them focus on total parasitic inductance from different packaging technology. Here, from the viewpoint of partial inductance which includes gate loop, power loop and common source, the designs for different inductances are surveyed. The power loop is further discussed from power terminals, bonding wires and direct bonded copper (DBC) conductor traces. The effects and sources of these inductances are analyzed. Furthermore, the typical design solutions to reduce the inductances are summarized. Finally, the challenges of SiC packages are presented.

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Section: Gate Loop Parasitic Inductancementioning

confidence: 99%

Review of the designs in low inductance SiC half‐bridge packaging

Yang

et al. 2022

IET Power Electronics

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“…by switching on/off a series of gate resistors (switch and resistor arrays), multi-level gate voltage or current source based gate drivers [95][96][97][98][99][100][101]. Also, relatively simple passive component based gate drivers can be used for shaping the output voltage with limited resolution [102,103].…”

Section: Waveform Shaping Through Gate Controlmentioning

confidence: 99%

Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters

Yuan

Laird

Walder

2021

IEEE Trans. Power Electron.

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101

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Power devices based on wide-bandgap (WBG) material such as silicon-carbide (SiC) can operate at higher switching speeds, higher voltages and higher temperatures compared to those based on silicon (Si) material. This paper highlights some opportunities brought by SiC devices in existing and emerging applications in terms of efficiency and power density improvement. While the opportunities are clear, there are also design challenges that must be met in order to realize their full potential. For example, the fast switching speeds and high dv/dt of SiC devices can cause increased electromagnetic interference (EMI), current overshoot, cross-talk effect and have a negative impact on loads such as motors. This paper presents several potential solutions to tackle the application challenges and to fully exploit the superior characteristics of SiC devices and converters while attenuating their negative side-effects. This paper provides an overview of recent SiC device research and development activities based on academic literature, work carried out by the authors and collaborators as well as input from industry. It aims to provide benchmark results and a timely and useful reference to accelerate the adoption and deployment of SiC devices and converters.

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A dv/dt Control Strategy of SiC MOSFET for Turn-off Loss Reduction within Entire Operational Power Range

Jiang

et al. 2021

2021 IEEE International Conference on Electrical Engineering and Mechatronics Technology (ICEEMT)

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SiC MOSFET Switching Waveform Profiling Through Passive Networks

Cited by 4 publications

References 19 publications

Review of the designs in low inductance SiC half‐bridge packaging

Review of the designs in low inductance SiC half‐bridge packaging

Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters

A dv/dt Control Strategy of SiC MOSFET for Turn-off Loss Reduction within Entire Operational Power Range

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