SiC Materials and Processing Technology

Wijesundara, Muthu B. J.; Azevedo, Robert G.

doi:10.1007/978-1-4419-7121-0_2

Cited by 15 publications

(6 citation statements)

References 145 publications

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“…Each deposition method has its own set of process parameters and characteristics. SiC thin-film deposition has been most recently reviewed in detail by Wijesundara and Azevedo [ 7 ]. Although other review articles and book chapters also cover SiC film deposition technology [ 24 , 25 , 26 , 27 ], there are still few reports focused on presenting the progress of CVD techniques for SiC MEMS/NEMS applications.…”

Section: Chemical Vapor Synthesis Of Sic Films: From Cvd To Aldmentioning

confidence: 99%

“…With the improvement of LPCVD reactors, the focus was shifted, because it has better control of the film growth in terms of gas phase nucleation and impurity levels. Most of today’s industrial processes are currently based on LPCVD, but APCVD is still being applied in research labs around the world [ 7 ].…”

Section: Chemical Vapor Synthesis Of Sic Films: From Cvd To Aldmentioning

confidence: 99%

“…In the first reports on SiC MEMS, the atmospheric pressure chemical vapor deposition (APCVD) was the technique used for the growth of 3C-SiC epitaxial films. Because of its design and types of precursors, this technique required high temperatures (above 1050 °C), which limited the SiC film growth on a wide range of materials, besides not being suitable for monolithic integration with integrated circuits (ICs) [ 7 ]. Driven by these limitations, several efforts have been made to develop methods to synthesize SiC films at lower temperatures than those used in APCVD, such as low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced chemical vapor deposition (PECVD).…”

Section: Introductionmentioning

confidence: 99%

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Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

Fraga

Pessoa

2020

Micromachines

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A search of the recent literature reveals that there is a continuous growth of scientific publications on the development of chemical vapor deposition (CVD) processes for silicon carbide (SiC) films and their promising applications in micro- and nanoelectromechanical systems (MEMS/NEMS) devices. In recent years, considerable effort has been devoted to deposit high-quality SiC films on large areas enabling the low-cost fabrication methods of MEMS/NEMS sensors. The relatively high temperatures involved in CVD SiC growth are a drawback and studies have been made to develop low-temperature CVD processes. In this respect, atomic layer deposition (ALD), a modified CVD process promising for nanotechnology fabrication techniques, has attracted attention due to the deposition of thin films at low temperatures and additional benefits, such as excellent uniformity, conformability, good reproducibility, large area, and batch capability. This review article focuses on the recent advances in the strategies for the CVD of SiC films, with a special emphasis on low-temperature processes, as well as ALD. In addition, we summarize the applications of CVD SiC films in MEMS/NEMS devices and prospects for advancement of the CVD SiC technology.

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Section: Chemical Vapor Synthesis Of Sic Films: From Cvd To Aldmentioning

confidence: 99%

Section: Chemical Vapor Synthesis Of Sic Films: From Cvd To Aldmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

Fraga

Pessoa

2020

Micromachines

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“…Recently, the growth of SiC substrates using the high temperature chemical vapor deposition (HTCVD) process has attracted the attention of semiconductor manufacturers because of its ability to overcome the key hurdle of producing a relatively defect-free structure compared with the modified Lely process. − Due to the potential for very low micropipe density and concomitant improved processing yield and device reliability, the HTCVD process is also considered for substrate processing in this analysis. Literature suggests that growth rates up to 1.0 mm/h can be achieved with the HTCVD process, but may result in a higher micropipe density . However, at higher growth rates (0.8–1.0 mm/h), micropipe density is observed to be high .…”

Section: Materials and Manufacturing Phase Analysismentioning

confidence: 99%

Energy Impacts of Wide Band Gap Semiconductors in U.S. Light-Duty Electric Vehicle Fleet

Warren

Riddle

Graziano

et al. 2015

Environ. Sci. Technol.

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Silicon carbide and gallium nitride, two leading wide band gap semiconductors with significant potential in electric vehicle power electronics, are examined from a life cycle energy perspective and compared with incumbent silicon in U.S. light-duty electric vehicle fleet. Cradle-to-gate, silicon carbide is estimated to require more than twice the energy as silicon. However, the magnitude of vehicle use phase fuel savings potential is comparatively several orders of magnitude higher than the marginal increase in cradle-to-gate energy. Gallium nitride cradle-to-gate energy requirements are estimated to be similar to silicon, with use phase savings potential similar to or exceeding that of silicon carbide. Potential energy reductions in the United States vehicle fleet are examined through several scenarios that consider the market adoption potential of electric vehicles themselves, as well as the market adoption potential of wide band gap semiconductors in electric vehicles. For the 2015−2050 time frame, cumulative energy savings associated with the deployment of wide band gap semiconductors are estimated to range from 2−20 billion GJ depending on market adoption dynamics.

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“…Silicon carbide (SiC) is known to have better adaptability in harsh environments. , Specifically, nanowires (NWs) of SiC could enable solution-processable (printable) active devices. As SiC nanowires (NWs) have been shown to preserve some of the superior physical properties of the bulk SiC, these are being developed as an alternative material to silicon (Si)-based devices for deployment in harsh environments. , These properties include low intrinsic carrier density, wide energy band gap, high melting temperature, and high thermal conductivity.…”

mentioning

confidence: 99%

Solution Processed Schottky Diodes Enabled by Silicon Carbide Nanowires for Harsh Environment Applications

et al. 2023

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Silicon carbide nanowires (SiC NWs) exhibit promising features to allow solution-processable electronics to be deployed in harsh environments. By utilizing a nanoscale form of SiC, we were able to disperse the material into liquid solvents, while maintaining the resilience of bulk SiC. This letter reports the fabrication of SiC NW Schottky diodes. Each diode consisted of just one nanowire with an approximate diameter of 160 nm. In addition to analyzing the diode performance, the effects of elevated temperatures and proton irradiation on the current−voltage characteristics of SiC NW Schottky diodes were also examined. The device could maintain similar values for ideality factor, barrier height, and effective Richardson constant upon proton irradiation with a fluence of 10 16 ion/ cm 2 at 873 K. As a result, these metrics have clearly demonstrated the hightemperature tolerance and irradiation resistance of SiC NWs, ultimately indicating that they may provide utility in allowing solution-processable electronics in harsh environments.

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SiC Materials and Processing Technology

Cited by 15 publications

References 145 publications

Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

Energy Impacts of Wide Band Gap Semiconductors in U.S. Light-Duty Electric Vehicle Fleet

Solution Processed Schottky Diodes Enabled by Silicon Carbide Nanowires for Harsh Environment Applications

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