SiC Films and Coatings

Locke, Christopher; Severino, Andrea; Via, F. La; Reyes, M.; Register, Joseph; Saddow, Stephen E.

doi:10.1016/b978-0-12-385906-8.00002-7

Cited by 21 publications

(11 citation statements)

References 78 publications

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“…Through of LPCVD technique, 3C-SiC epitaxial films were grown on Si wafers [38]. In recent years, LPCVD has become a leading technique for the growth of 3C-SiC polycrystalline films on various substrates, including silicon dioxide (SiO 2 ) [39] and silicon nitride (Si 3 N 4 ) [40]. SiC films are deposited in LPCVD using dual-source precursors, i.e., one for Si and other for C. Several chemicals have been implemented in this technique, such as SiH 4 or DCS as a source of Si and C 3 H 8 or acetylene (C 2 H 2 ) as a carbon source [41][42][43][44][45][46].…”

Section: Low-pressure Chemical Vapor Depositionmentioning

confidence: 99%

Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

Fraga

Pessoa

2020

Micromachines

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A search of the recent literature reveals that there is a continuous growth of scientific publications on the development of chemical vapor deposition (CVD) processes for silicon carbide (SiC) films and their promising applications in micro- and nanoelectromechanical systems (MEMS/NEMS) devices. In recent years, considerable effort has been devoted to deposit high-quality SiC films on large areas enabling the low-cost fabrication methods of MEMS/NEMS sensors. The relatively high temperatures involved in CVD SiC growth are a drawback and studies have been made to develop low-temperature CVD processes. In this respect, atomic layer deposition (ALD), a modified CVD process promising for nanotechnology fabrication techniques, has attracted attention due to the deposition of thin films at low temperatures and additional benefits, such as excellent uniformity, conformability, good reproducibility, large area, and batch capability. This review article focuses on the recent advances in the strategies for the CVD of SiC films, with a special emphasis on low-temperature processes, as well as ALD. In addition, we summarize the applications of CVD SiC films in MEMS/NEMS devices and prospects for advancement of the CVD SiC technology.

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Section: Low-pressure Chemical Vapor Depositionmentioning

confidence: 99%

Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

Fraga

Pessoa

2020

Micromachines

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“…Additionally, SiC is a biocompatible material [3]. In spite of the wide application of SiС epitaxial films in electronics, photonics, and sensorics, extensive research is being conducted to create simple and inexpensive methods for growing SiC heteroepitaxial films on Si substrates [4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Synthesis of silicon carbide in a matrix of graphite-like carbon prepared via carbonization of rigid-rod polyimide Langmuir–Blodgett films on silicon substrate

Goloudina,

Pasyuta,

Kirilenko

et al. 2024

Nanotechnology

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Silicon carbide (SiC) is a wide-band gap semiconductor that exceeds other semiconducting materials (except diamond) in electrical, mechanical, chemical, and radiation stability. In this paper, we report a novel approach to fabrication of SiC nano films on a Si substrate, which is based on the endotaxial growth of a SiC crystalline phase in a graphite-like carbon (GLC) matrix. GLC films were formed by carbonization of rigid rod polyimide (PI) Langmuir-Blodgett (LB) films on a Si substrate at 1000˚C in vacuum. After rapid thermal annealing of GLC films at 1100˚C and 1200˚C, new types of heterostructures SiC(10 nm)/GLC(20 nm)/Si(111) and SiC(20 nm)/GLC(15 nm)/SiC(10 nm)/Si(111) were obtained. The SiC top layer was formed due to the Si-containing gas phase present above the surface of GLC film. An advantage of the proposed method of endotaxy is that the SiC crystalline phase is formed within the volume of the GLC film of a thickness predetermined by using PI LB films with different numbers of monolayers for carbonization. This approach allows growing SiC layers close to the 2D state, which is promising for optoelectronics, photovoltaics, spinotronics.

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“…a-SiC compares favorably to typical passivation materials, particularly in terms of the robustness and lifetime. In particular, the dissolution rate in phosphate-buffered saline (PBS) is an order of magnitude slower than that of more conventional passivation materials like Si 3 N 4 or SiO 2 [ 18 , 31 , 32 , 33 ], and significantly longer than parylene or polyimide passivation [ 34 , 35 ] due to a-SiC’s reduced permeability to water. This results in longer implant lifetimes and reduces material leeching into surrounding tissue.…”

Section: Introductionmentioning

confidence: 99%

Amorphous SiC Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition for Passivation in Biomedical Devices

Greenhorn,

Bano,

Stambouli

et al. 2024

Materials

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Amorphous silicon carbide (a-SiC) is a wide-bandgap semiconductor with high robustness and biocompatibility, making it a promising material for applications in biomedical device passivation. a-SiC thin film deposition has been a subject of research for several decades with a variety of approaches investigated to achieve optimal properties for multiple applications, with an emphasis on properties relevant to biomedical devices in the past decade. This review summarizes the results of many optimization studies, identifying strategies that have been used to achieve desirable film properties and discussing the proposed physical interpretations. In addition, divergent results from studies are contrasted, with attempts to reconcile the results, while areas of uncertainty are highlighted.

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SiC Films and Coatings

Cited by 21 publications

References 78 publications

Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

Synthesis of silicon carbide in a matrix of graphite-like carbon prepared via carbonization of rigid-rod polyimide Langmuir–Blodgett films on silicon substrate

Amorphous SiC Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition for Passivation in Biomedical Devices

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