2008
DOI: 10.1016/j.nucengdes.2008.01.022
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SiC encapsulation of (V)HTR components and waste by laser beam joining of ceramics

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Cited by 13 publications
(3 citation statements)
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“…Also encapsulation of spherical fuel elementsmoulded and pressed like standard elements -in SiC half spheres has been considered. With the laser beam joining of ceramics the key technology is now available for the SiC encapsulation of (V)HTR components and waste [6]. The irradiation behavior of the solder is under investigation.…”
Section: Corrosion-resistance Coating Methodsmentioning
confidence: 99%
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“…Also encapsulation of spherical fuel elementsmoulded and pressed like standard elements -in SiC half spheres has been considered. With the laser beam joining of ceramics the key technology is now available for the SiC encapsulation of (V)HTR components and waste [6]. The irradiation behavior of the solder is under investigation.…”
Section: Corrosion-resistance Coating Methodsmentioning
confidence: 99%
“…After filling the moderator-fuel matrix in the SiC hollow sphere and densification by vibrating technology the opening is closed with a SiC plug and gas-tight sealing through laser beam joining [6]. Recent R&D efforts were focussed on two issues:…”
Section: Sic Hollow Sphere Encapsulationmentioning
confidence: 99%
“…More specifically, SiC is being considered for nuclear applications due to its low neutron absorption cross section, stability under high-temperature neutron irradiation at elevated temperatures, and inherently low level of long-lived radioisotopes produced through nuclear transmutations [1,3,[4][5][6][7]. These properties make it a suitable material for structural and cladding components of fission reactors [8]; blanket components of fusion reactors [4,5,9]; encapsulation media for storing radioactive waste [10]; and components of Tri-Structural Isotropic (TRISO) and other fuel-pellet designs for advanced fission reactor concepts [11]. SiC is also a wide band-gap semiconductor that retains its semiconducting properties to high temperatures, making it useful for devices operating at high power and high frequency, and in high temperature environments (though, unfortunately, dopable only by ion implantation [12]).…”
Section: Introductionmentioning
confidence: 99%