SiC devices: physics and numerical simulation

Ruff, M.; Mitlehner, H.; Helbig, R.

doi:10.1109/16.293319

Cited by 459 publications

(176 citation statements)

References 54 publications

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“…However, the density of temperature-induced intrinsic carriers in these materials surpasses the concentration of dopant-induced carriers at these very high temperatures (beyond 800 °C for SiC and 1000 °C for GaN), degrading device performance. [301][302][303][304][305] Thus, there is a strong incentive to develop UWBG technology for these extreme environments, perhaps able to withstand operating temperatures above 1000 °C. A first aspect of this technology is the sensors themselves, including (i) electrochemical, (ii) optical, (iii) mechanical (MEMS), and (iv) chargedparticle-based sensors.…”

Section: Extreme-environment Sensors/electronicsmentioning

confidence: 99%

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Tsao

Chowdhury

Hollis

et al. 2017

Adv Elect Materials

965

463

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Section: Extreme-environment Sensors/electronicsmentioning

confidence: 99%

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Tsao

Chowdhury

Hollis

et al. 2017

Adv Elect Materials

965

463

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“…Future MOSFET technology is likely adopt still more advanced processing and materials, for example SiGe [7] and SiC [8]. Therefore, the capability to exploit multi-dimensional device simulation in conjunction with process simulation is an attractive alternative for extraction these physical dependencies of noise.…”

Section: Bias Dependent Intrinsic Noise Performancementioning

confidence: 99%

Issues in high frequency noise simulation for deep submicron MOSFETs

Goo¹

2000

AIP Conference Proceedings

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Abstract. This paper proposes issues in highly accurate high frequency noise simulation for deep submicron MOSFETs. Unlike classical RF design, in which a given device with fixed characteristics is used, CMOS RF design permits selection of user specified device geometries as well as matching elements and bias conditions. Therefore, an exhaustive intrinsic noise modeling of MOSFETs across the entire operating condition is required. In order to capture the physics needed for accurate noise simulation of short-channel MOSFETs, a noise simulation tool needs the capability to exploit multi-dimensional device simulation in conjunction with process simulation. Further scaling of gate oxides introduces substantial gate leakage current due to the direct tunneling of electrons in the channel. It is expected that this current subsequently introduces shot noise current in the gate and the drain.

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“…This is primarily due to the wider band-gap and higher thermal conductivity of SiC, as discussed in [1][2][3]. Cubic silicon carbide (3C-SiC) is particularly promising for this application due to its inversion layer mobility being higher than in other SiC polytypes [4].…”

Section: Introductionmentioning

confidence: 99%

Distributions of electric parameters in MOS structures on 3C-SiC substrate

Piskorski¹,

Przewłocki²,

Esteve³

et al. 2013

Open Physics

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Abstract:In this work studies of some electrical parameters of the MOS structure based on 3C-SiC substrate are presented. The effective contact potential difference φ MS , the barrier height at the gate-dielectric interface E BG and the flat-band in semiconductor voltage V F B were measured using several electric and photoelectric techniques. Values of these parameters obtained on structures with different gate areas decrease monotonically with increasing parameter R, defined as the ratio of the gate perimeter to the gate area. Such behavior confirmed results obtained on MOS structures on silicon substrate and also supported our hypothesis that the mechanical stress in the dielectric layer under the metal gate causes non uniform distribution of some parameters over the gate area of MOS structure. PACS (

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SiC devices: physics and numerical simulation

Cited by 459 publications

References 54 publications

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Issues in high frequency noise simulation for deep submicron MOSFETs

Distributions of electric parameters in MOS structures on 3C-SiC substrate

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