SiC detectors for radiation sources characterization and fast plasma diagnostic

Characterization of X-ray emission from laser generated plasma

“…Data concerning the laser influence can be interpreted considering the Iλ 2 factor. For example the ponderomotive energy that for high laser intensities represents the energy transferred to electrons is given by [8]: O = 9 * + P * Q * RS5 * 2 3 A * = 9.33×10 URV 4 in (eV) (6) where e is the electron charge, E 0 the electric field of the electromagnetic wave, m e the electron mass and c the speed of light in vacuum. Many other plasma parameters depend on the Iλ 2 factor, such as the shockwave pressure, the ion temperature, the emitted ion current and the electric field generated as a result of charge separation effects or the hot electron temperature, kT hot , given by the relation [8]: All the presented results show that the target parameters as well as the laser parameters play a fundamental role in the generation of X-ray from laser-target interaction.…”

“…They give complementary information being the first device, labeled SiC IAZ4, able to detect low energy ions, electrons, soft X-rays and UV [5] due to the active region directly exposed to radiation and to the low thickness of the active region (4 µm). On the other hand the second detector, labeled SiC AZ 80, presents a thick top metallization (Ni 2 Si, 200 nm thick) and a deep active region about 80 µm applying 600 V and for these reasons is very efficient in detecting hard X-rays and high ions energy [6].…”

Optimization for Ion Detection and Recognition From Laser-Generated Plasma Using SiC Detectors Connected in Time-of-Flight Acquisition

“…The strip length is about 3 mm, the total SiC surface is about 8 mm 2 , and the uncovered surface directly exposed to plasma is about 6 mm 2 . A 250-nm-thick hydrogenated silicon nitride layer (SiN:H) was applied to the front contact as a passivating layer [17].…”