SiC Defect Density Reduction by Epitaxy on Porous Surfaces

Saddow, Stephen E.; Mynbaeva, M. G.; Choyke, W. J.; Devaty, Robert P.; Bai, Song; Melnychuck, Galyna; Koshka, Yaroslav; Dmitriev, Vladimir; Wood, Clay

doi:10.4028/www.scientific.net/msf.353-356.115

Cited by 18 publications

(15 citation statements)

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“…There has been considerable interest in recent years in using porous (ps) SiC as a substrate to grow epitaxial SiC and GaN with reduced dislocation density [1][2][3][4][5][6]. Porous SiC is prepared by anodizing n-type SiC in hydrofluoric acid (HF) under ultra-violet illumination [7].…”

Section: Introductionmentioning

confidence: 99%

Plasma-assisted molecular beam epitaxy of GaN on porous SiC substrates with varying porosity

Sagar¹,

Lee²,

Feenstra³

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Abstract:We have grown GaN on porous SiC substrates and studied the effect of substrate porosity on the overgrown film quality in terms of defect structure and density and film strain. The growth was performed by plasma-assisted molecular beam epitaxy (PAMBE). The GaN films were characterized by x-ray, transmission electron microscopy (TEM) and wafer curvature measurements by surface profilometry. TEM images show that the GaN film grown on porous substrates contains open tubes and a low dislocation density in regions between tubes. We discuss various growth mechanisms that can lead to these defect features in the GaN film. However, we do not find any overall improvement in the x-ray rocking curve FWHM of the GaN films grown on porous substrates compared to those on nonporous substrates. It was found that the GaN films grown on porous SiC were significantly more strain relaxed compared to those grown on nonporous substrate. We propose various mechanisms that can lead to the reduction in strain in GaN films grown on porous substrates and compare the data with finite element analysis (FEA) simulations of such a system.

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Section: Introductionmentioning

confidence: 99%

Plasma-assisted molecular beam epitaxy of GaN on porous SiC substrates with varying porosity

Sagar¹,

Lee²,

Feenstra³

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…[1][2][3] Recently, the improvement has been demonstrated by a statistical comparison of reverse breakdown voltages of Schottky barrier diodes (SBDs) fabricated on PSC and standard (STD) SiC substrates. 4 Here, we use temperature-dependent current-voltage (I-V), capacitance-voltage (C-V), and deep-level transient spectroscopy (DLTS) measurements to see if there is any correlation between reverse breakdown voltage and electrical characteristics of these SiC-on-PSC and SiC-on-STD SBDs.…”

Section: Introductionmentioning

confidence: 99%

Electrical characteristics of a 6H-SiC epitaxial layer grown by chemical vapor deposition on porous SiC substrate

Fang

Chandrasekaran

Rao

et al. 2004

Journal of Elec Materi

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Porous SiC (PSC) has been proposed as a buffer layer for reducing defects in epitaxial SiC layers. In this study, electrical characteristics of a 6H-SiC epitaxial layer grown by chemical vapor deposition on a porous SiC substrate (SiC-on-PSC) have been compared to those simultaneously grown on a standard SiC substrate (SiC-on-STD). Schottky barrier diodes (SBDs) have been fabricated on both epitaxial layers and then investigated with temperature-dependent current-voltage (I-V), capacitance-voltage (C-V), and deep-level transient spectroscopy (DLTS) measurements. The SBDs on both SiC-on-PSC and SiC-on-STD show about the same I-V and C-V characteristics, and at least four electron traps, i.e., B (0.75 eV), C (0.63 eV), D (0.40 eV), and E (0.16 eV), can be identically found in both SBDs by DLTS measurements. Thus, we conclude that the electrical quality of SiC-on-PSC is comparable to that of SiC-on-STD, and that the higher breakdown voltages observed in SBDs on SiC-on-PSC are not obviously related to a different defect structure.

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“…Porous SiC has recently been explored as a promising substrate to grow epitaxial SiC and GaN with reduced dislocation density [1][2]. Such porous materials are produced by anodizing n-type SiC in hydrofluoric acid under ultra-violet illumination [3].…”

Section: Introductionmentioning

confidence: 99%

Growth of GaN on porous SiC and GaN substrates

Inoki

Kuan

Sagar

et al. 2003

phys. stat. sol. (a)

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GaN films were grown on porous SiC and GaN templates using both plasma-assisted molecular beam epitaxy (PAMBE) and metal-organic chemical vapor deposition (MOCVD) to evaluate possible advantage of epitaxy on a porous substrate. For the growth of GaN on porous SiC by PAMBE, transmission electron microscopy (TEM) observations indicate that the exposed SiC suface pores tend to extend into the GaN film as open tubes and to trap Ga droplets. The GaN layers grown on porous templates have fewer threading dislocations originating at the interface, but they have additional defects in the form of half-loop dislocations which act to relieve the strain in the films. For PAMBE of GaN on porous GaN, dislocations existing in the porous seed layer are seen to propagate through the porous layer into the overgrown GaN, resulting in no dislocation reduction. For MOCVD of GaN on porous GaN, the initial regrowth tend to bend laterally the dislocations and enhance their annihilation, resulting in 5-10× fewer dislocations in the overgrown film.

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SiC Defect Density Reduction by Epitaxy on Porous Surfaces

Cited by 18 publications

References 0 publications

Plasma-assisted molecular beam epitaxy of GaN on porous SiC substrates with varying porosity

Plasma-assisted molecular beam epitaxy of GaN on porous SiC substrates with varying porosity

Electrical characteristics of a 6H-SiC epitaxial layer grown by chemical vapor deposition on porous SiC substrate

Growth of GaN on porous SiC and GaN substrates

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