SiC-based MMC for HVDC Applications: A Cost-Benefit Analysis

Ganesh, Tanneeru Venkata; Patro, Siba Kumar; Chaturvedi, Pradyumn

doi:10.1109/sefet55524.2022.9909145

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2023

2024

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Cited by 2 publications

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“…Therefore, the use of an SiC AHB is possible to operate by choice of a proper gate resistor design. However, the final choice of use will depend on the ratio of converter fix costs and the economical loss costs of the system [23].…”

Section: Discussionmentioning

confidence: 99%

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Design and validation of a novel semiconductor area optimised 3300 V SiC half bridge for MMC

Bergmann,

Bakran

2024

IET Power Electronics

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This article presents the design and experimental validation of a novel semiconductor area optimised 3300 V half bridge with Silicon Carbide (SiC) MOSFETs for HVDC converters. Based on a loss simulation, the problem statement is provided. On this results, a mathematical derivation for the optimised semiconductor area design is executed. After this step, a system loss simulation shows the performance in efficiency and specific output power. Finally, a proof of concept was provided by a scaled hardware test setup to characterise the dynamic behaviour of the novel SiC half bridge design compared to the conventional SiC half bridge.

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Section: Discussionmentioning

confidence: 99%

“…FIGURE23 Influence of T Dead optimisation on turn-on losses, AHB no opt. T Dead ≥ 5 ¯s (blue), AHB w. T Dead = 1.5 ¯s (green).…”

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confidence: 99%