SiC and GaN Wide Bandgap Device Technology Overview

Milligan, J.W.; Sheppard, S.T.; Pribble, W.L.; Wu, Yilin; Muller, StG.; Palmour, John W.

doi:10.1109/radar.2007.374395

Cited by 41 publications

(21 citation statements)

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“…The current GaN development is mostly driven by commercial applications for broadband wireless access, using discrete devices, and only very few HPA MMICs around Sband are presented so far [6].…”

Section: Gan Technology In Tr-modulesmentioning

confidence: 99%

S-Band AlGaN/GaN Power Amplifier MMIC with over 20 Watt Output Power

Heijningen

Visser

Würfl

et al. 2008

2008 European Microwave Integrated Circuit Conference

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This paper presents the design of an S-band HPA MMIC in AlGaN/GaN CPW technology for radar TR-module application. The trade-offs of using an MMIC solution versus discrete power devices are discussed. The MMIC shows a maximum output power of 38 Watt at 37% Power Added Efficiency at 3.1 GHz. An output power of more than 20 Watt has been simulated from 2.5 to 3.7 GHz. The robustness against high output VSWR values up to 4:1 has been checked and simulations show a maximum drain-gate voltage of around 60 V. I. INTRODUCTIONThe wide-bandgap semiconductor technology GalliumNitride (GaN) is a relatively new and very promising technology for high frequency power applications. The advantages of GaN are already described by many authors, such as [1], and are mainly the high power density, high breakdown voltage and good thermal properties of the mostly used Silicon-Carbide (SiC) substrate. Although the processing technology is still under development and continuously improving, the first GaN commercial products are already available. These products are mainly individually packaged transistors or power-bars for telecommunication infrastructure applications, such as WiMAX base-station amplifiers. GaN MMIC technology is available but has not yet been used much for S-band power amplifiers. This paper presents an S-band GaN MMIC power amplifier, together with the trade-offs and comparison to power-bars, and the application of GaN MMIC in S-band radar Transmit-Receiver (TR) module front-ends.

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Section: Gan Technology In Tr-modulesmentioning

confidence: 99%

S-Band AlGaN/GaN Power Amplifier MMIC with over 20 Watt Output Power

Heijningen

Visser

Würfl

et al. 2008

2008 European Microwave Integrated Circuit Conference

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“…GaN is a wide band gap (~3.4 eV at room temperature) semiconductor with a promising combination of material properties including a high electric breakdown field, good electron mobility, high saturation velocity, relatively high thermal conductivity, and is stable at high operating temperatures [1]; all of which contribute to making these devices very suitable for RF devices where high power and high frequency operation are needed [2,3]. Development and fabrication of reliable AlGaN/GaN HEMTs has significantly advanced in recent years to enable the production of high quality, commercially available devices in a wide variety of high power and high frequency applications.…”

Section: Introductionmentioning

confidence: 99%

Transient stress characterization of AlGaN/GaN HEMTs due to electrical and thermal effects

Jones

Heller

Dorsey

et al. 2015

Microelectronics Reliability

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a b s t r a c tIn this paper, we present finite element simulation results of the transient stress response of an AlGaN/GaN high electron mobility transistor (HEMT). The modeling technique involves a small-scale electro-thermal model coupled to a large-scale mechanics model to determine the resulting stress distribution within a device operated under radio frequency (RF) conditions. The electrical characteristics of the modeled device were compared to experimental measurements and existing simulation data from literature for validation. The results show critical regions around the gate Schottky contact undergo drastically different transient stresses during pulsed operation. Specifically, stress profiles within the AlGaN layer around the gate foot print (GFP) undergo highly tensile electrothermal stresses while stresses within the AlGaN outside the gate connected field plate (GCFP) towards the drain contact undergo highly tensile electrical stress and compressive thermoelastic stress. It is shown AlGaN/GaN HEMTs undergo large amounts of cyclic loading during typical transient operation. Based on these findings, transient failure mechanisms may differ from those previously studied under DC operation due to large amount of cyclic loading of a device around the gate structure.

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“…Monolithic microwave integrated circuits (MMIC) based on gallium nitride (GaN) high electron mobility transistors (HEMT) have the advantage of providing broadband power performance (Milligan et al, 2007). The high breakdown voltage and high current density of GaN devices provide higher power density than the traditional technology based on GaAs.…”

Section: Introductionmentioning

confidence: 99%

“…GaN technological process is still immature and complex. However, gate lithography resolution lower than 0.2 m and AlGaN/GaN epi-structures on 100-mm SiC substrates are already available (Milligan et al, 2007). …”

mentioning

confidence: 99%

Broadband GaN MMIC Power Amplifiers design

Gonzalez-Garrido¹,

Grajal²

2010

Microwave and Millimeter Wave Technologies Modern UWB Antennas and Equipment

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AlGaN/GaN HEMT TechnologyFirst of all, MMIC GaN technology has to be evaluated. High power GaN devices operate at high temperature and high-dissipated power due to the high power density of performance. Therefore, the use of substrates with high thermal conductivity like the silicon carbide (SiC) is preferred. GaN technological process is still immature and complex. However, gate lithography resolution lower than 0.2 m and AlGaN/GaN epi-structures on 100-mm SiC substrates are already available (Milligan et al., 2007). 22www.intechopen.com

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SiC and GaN Wide Bandgap Device Technology Overview

Cited by 41 publications

References 1 publication

S-Band AlGaN/GaN Power Amplifier MMIC with over 20 Watt Output Power

S-Band AlGaN/GaN Power Amplifier MMIC with over 20 Watt Output Power

Transient stress characterization of AlGaN/GaN HEMTs due to electrical and thermal effects

Broadband GaN MMIC Power Amplifiers design

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