Si1−xGex photodiode with segregated Ge nanocrystals

Ouyang, Yao Tsung; Hsieh, Hsien Chien; Lin, Ping; Tseng, Tsan Hsien; Ku, Ching−Shun; Lee, Hsin Yi; Wu, Albert T.

doi:10.1016/j.matlet.2016.08.054

Materials Letters

2016

DOI: 10.1016/j.matlet.2016.08.054

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Si1−xGex photodiode with segregated Ge nanocrystals

Yao Tsung Ouyang

Hsien Chien Hsieh

Ping Lin

et al.

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“…The process of NCs formation in an oxide matrix is related with the deposition conditions if the deposition takes place on heated substrate [33][34][35] , but the films nanocrystallization can be accomplished by thermal annealing at suitable temperatures. For obtaining SiGe NCs in thin films or multilayers, annealing in 600-1055 °C range is performed 2,33,36,37 . A challenging problem to form SiGe NCS in SiO 2 matrix is the oxygen excess that may occur during deposition process or heating treatment.…”

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SiGe nanocrystals in SiO2 with high photosensitivity from visible to short-wave infrared

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Sultan

et al. 2020

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Films of SiGe nanocrystals (NCs) in oxide have the advantage of tuning the energy band gap by adjusting SiGe NCs composition and size. In this study, SiGe-SiO2 amorphous films were deposited by magnetron sputtering on Si substrate followed by rapid thermal annealing at 700, 800 and 1000 °C. We investigated films with Si:Ge:SiO2 compositions of 25:25:50 vol.% and 5:45:50 vol.%. TEM investigations reveal the major changes in films morphology (SiGe NCs with different sizes and densities) produced by Si:Ge ratio and annealing temperature. XPS also show that the film depth profile of SiGe content is dependent on the annealing temperature. These changes strongly influence electrical and photoconduction properties. Depending on annealing temperature and Si:Ge ratio, photocurrents can be 103 times higher than dark currents. The photocurrent cutoff wavelength obtained on samples with 25:25 vol% SiGe ratio decreases with annealing temperature increase from 1260 nm in SWIR for 700 °C annealed films to 1210 nm for those at 1000 °C. By increasing Ge content in SiGe (5:45 vol%) the cutoff wavelength significantly shifts to 1345 nm (800 °C annealing). By performing measurements at 100 K, the cutoff wavelength extends in SWIR to 1630 nm having high photoresponsivity of 9.35 AW−1.

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SiGe nanocrystals in SiO2 with high photosensitivity from visible to short-wave infrared

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Logofatu

Sultan

et al. 2020

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Organic-inorganic PTAA-SiGe transparent optical materials performance analysis for photo device applications

Nasir,

Ghosh,

Dakua

et al. 2024

Optical Materials

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Si1−xGex photodiode with segregated Ge nanocrystals

Cited by 2 publications

References 15 publications

SiGe nanocrystals in SiO2 with high photosensitivity from visible to short-wave infrared

SiGe nanocrystals in SiO2 with high photosensitivity from visible to short-wave infrared

Organic-inorganic PTAA-SiGe transparent optical materials performance analysis for photo device applications

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