Si/W Ratio Changes and Film Peeling during Polycide Annealing

Abstract

Tungsten silicide has found wide applications in VLSI device fabrications; nontheless, peeling has been a major problem in manufacturing. Adhesion of tungsten silicide films is strongly related to the film compositions, Si/W atomic ratios, which in turn can be altered by oxidation conditions. In this work, we investigated the tungsten polycide peeling mechanism and explored the causes for peeling. RBS, XRD and Auger were used to correlate the silicide adhesion to its composition changes due to oxidation. It is found that during the first oxidation of the polycide films, the silicon atoms in the silicide films are driven out of the silicide bulk toward both the surface and polysilicon-silicide interface. Bared oxidized polycide films would peel upon further oxidation. The peeling mechanism is illustrated. Solutions to the film peeling prevention will also be proposed.

Suppression of Fluorine Penetration by Use of In Situ Stacked Chemical Vapor Deposited Tungsten Film

“…For many years tungsten silicide has been studied as a gate electrode (polycide) and a material for interconnection technology. [1][2][3][4] However, when using tungsten silicide, wordline delay becomes a serious issue for large dimension memory application such as 64 Mbit dynamic random access memory. One alternative to this problem is to deposit pure metal on top of the polysilicon wordline.…”

Analysis of P-Doped Polycrystalline Silicon Missing of W-Polycide Gate for 2X nm NAND Flash

“…http://dx.doi.org/10.7567/JJAP.52.036502 from 2.6 decreases to saturated with Si, 2.3 after thermal annealing 13) ) deformation after thermal oxidation. Moreover, abovementioned behaviors become worse after a high thermal process in Fig.…”