Si-SiO2 interface structures on Si(100), (111), and (110) surfaces

Hattori, Takeo; Suzuki, Tetsuhito

doi:10.1063/1.94392

Cited by 97 publications

(26 citation statements)

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“…This accumulation is accompanied by Si ,+ , Si 2+ -state formation. The results of the experiments [7][8][9][10][11] carried out on oxide films with thicknesses of 10-50 A do confirm the localization of Si ,+ and Si 2+ states in the narrow [from 2 A (Ref. [11]) to 6-10 A (Ref.…”

supporting

confidence: 67%

“…The composition and structure of the transition region have been investigated previously. In particular, Grunthaner et ai [4], and subsequently others [5][6][7][8][9][10][11], found in Si 2/7 photoelectron spectra peaks attributed [4,5] to silicon atoms in different oxidation states, i.e., Si 14 ", Si 24 ", Si 34 ", and Si 44 ". The role of these states in oxide formation is still under discussion.…”

mentioning

confidence: 95%

“…The first is connected with oxygen-atom accumulation at the interface. Silica growth is found [1,[3][4][5][6][7][8][9][10][11][12][13][14][15][16] to proceed by oxygen (rather than silicon) diffusion [17], with the silicon-oxide formation occurring at the Si-SiCh interface. This accumulation is accompanied by Si ,+ , Si 2+ -state formation.…”

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confidence: 99%

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Direct observation of the layer-by-layer growth of initial oxide layers on Si(100) surface during thermal oxidation

et al. 1991

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We present the results of an x-ray photoelectron spectroscopy investigation in the real-time regime of the kinetics of high-temperature oxidation of the Si(100) surface. The dependence of the net concentration of silicon atoms in all oxidation states (i.e., Si ,+ , Si 2+ , Si 3+ , Si 4+ ) on oxygen exposure is found to exhibit a "step"-like behavior, each "step" corresponding to one oxide layer. The results obtained suggest a mechanism of layer-by-layer growth of initial oxide layers, with oxide-phase formation taking place at the Si-SiC>2 interface. PACS numbers: 81.60.Cp, 82.65.Jv, 82.80.PvIt was proposed recently [1,2] that the unique electrophysical characteristics of the Si-SiC>2 interface are likely determined by the formation kinetics of the transition region in thermal oxidation. However, the mechanism of formation of this transition region between silicon crystal and bulk S1O2 has yet been revealed, despite extensive study [2,3]. The reason for an atomically abrupt Si-SiC>2 interface is not understood either. The composition and structure of the transition region have been investigated previously. In particular, Grunthaner et ai [4], and subsequently others [5-11], found in Si 2/7 photoelectron spectra peaks attributed [4,5] to silicon atoms in different oxidation states, i.e., Si 14 ", Si 24 ", Si 34 ", and Si 44 ". The role of these states in oxide formation is still under discussion. In this Letter we report results which demonstrate for the first time that the growth of initial oxide monolayers proceeds by a layer-by-layer growth mechanism. Initially, there is accumulation of silicon atoms in Si 1 * and Si 24 " states at the interface, which is then followed by their transition into Si 3+ and Si 44 " at a constant quantity of silicon atoms in all Si w+ states. This quantity stands for one oxide layer.The experiments were carried out on the XSAM-800 spectrometer (the energy resolution is 0.9 eV). The x-ray photoemission spectrometry method was used (Mg Ka source). The electron binding energy was measured with 0.1 -eV reproducibility. The oxidation kinetics was investigated directly in the analyzer chamber in a real-time regime [12], contrary to the usually used [6,13] point-bypoint regime after a certain exposure. Admitting oxygen into the chamber (/? = 10~~6 Torr), we registered Si 2/7 and O Is spectra one by one every 3 min. The sample temperature of 1135 K was chosen in accordance with the conventional silicon-oxidation regime [1-3]. The spectrum of Si 2p recorded after oxidation, along with the result of its decomposition into components by leastsquares fitting after background subtraction, is depicted in Fig. 1. The peaks corresponding to Si 14 ", Si 24 ", Si 34 ", and Si 4+ states are shifted by 1.0, 1.7, 2.6, and 3.8 eV, respectively, towards higher binding energies relative to the substrate Si 2p peak (99 eV). These shifts are consistent with the results of previous studies: 0.6, 1.5, 2.8, and 4.5 eV (Ref. [4]); 1.0, 1.8, 2.7, and 3.5 eV (Ref. [5]); 1.0, 1.7, 2.6, and 3.6 eV (Ref. [6]); 0.95, ...

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confidence: 67%

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confidence: 95%

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Direct observation of the layer-by-layer growth of initial oxide layers on Si(100) surface during thermal oxidation

et al. 1991

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“…thermal oxidation and annealing) are so simple conceptually. As a result of extreme decrease in the dimensions of Si metal-oxide-semiconductor field effect transistor device (MOSFET), the electronic states in Si/SiO interfacial transition region playa vital role in device operation [5]. The existence of abrupt interfaces, atomic displacements of interface silicon and intermediate oxidation states of silicon are part of different experiments [6,7].…”

Section: Introductionmentioning

confidence: 99%

“…The chemical bonding configurations deduced from the observed oxidation states of silicon at the interface are the important basis for the understanding of the electronic states. The distribution of the intermediate oxidation states in the oxide film and the chemical bonding configuration at the interface for Si(100) and Si(111) were investigated [5] using measurements of Si 2p photoelectron spectra. One of the X-ray photoelectron spectroscopy (XPS) results is that the difference for <100> and <111> orientations is observed in the intermediate oxidation state spectra.…”

Section: Introductionmentioning

confidence: 99%

Study of SiO2/Si Interface by Surface Techniques

Ghita¹,

Logofatu²,

Negrila³

et al. 2011

Crystalline Silicon - Properties and Uses

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Composition analysis of anodic SiO₂/Si interface region using the XPS method

Nanjo

Kawahara

Mostafa

et al. 1993

Electron Comm Jpn Pt II

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Silicon oxide film, which has been used as a protective and active layer in Si devices, has been fabricated electrochemically at room temperature. The fabrication method is anodization combining a constant current and constant voltage mode. Ethylene glycol was used as an electrolyte. To improve the characteristics of silicon oxide film and also the interfacial property of the film with an Si substrate, the oxide film was annealed under hydrogen atmosphere. The depth profile of an atomic concentration was measured by X‐ray photoelectron spectrum (XPS). The thickness of the oxide film was varied by etching with p‐etchant. The as‐grown film is composed of nonstoichiometric silicon oxide of sub‐oxides, SiO2, SiO, and Si2O3, which are nonuniformly present near the Si‐oxide interface up to 40 Å from the Si surface. The remainder of the oxide is stoichiometric amorphous SiO2. After annealing, the amount of sub‐oxides decreases.

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Si-SiO2 interface structures on Si(100), (111), and (110) surfaces

Cited by 97 publications

References 5 publications

Direct observation of the layer-by-layer growth of initial oxide layers on Si(100) surface during thermal oxidation

Direct observation of the layer-by-layer growth of initial oxide layers on Si(100) surface during thermal oxidation

Study of SiO2/Si Interface by Surface Techniques

Composition analysis of anodic SiO₂/Si interface region using the XPS method

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Si-SiO2 interface structures on Si(100), (111), and (110) surfaces

Cited by 97 publications

References 5 publications

Direct observation of the layer-by-layer growth of initial oxide layers on Si(100) surface during thermal oxidation

Direct observation of the layer-by-layer growth of initial oxide layers on Si(100) surface during thermal oxidation

Study of SiO2/Si Interface by Surface Techniques

Composition analysis of anodic SiO2/Si interface region using the XPS method

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Product

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Composition analysis of anodic SiO₂/Si interface region using the XPS method