Si/SiGe electron resonant tunneling diodes with graded spacer wells

Abstract

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The progress towards terahertz quantum cascade lasers on silicon substrates

“…The lowest states in the barriers, however, have the lower mass of in the tunnel direction due to the compressive strain in the barriers [51] but this cannot be achieved in the tensile quantum wells. While the natural bandstructure does not support high barriers on relaxed substrates, the use of graded injectors and collectors allows band structure comparable to III-V devices [114]. While these results demonstrate tunnelling currents comparable to III-V materials, the high for the ground states in the quantum wells makes coupling wavefunctions through tunnel barriers for quantum cascade devices very difficult.…”

“…Resonant tunnelling [112][113][114] has been demonstrated using relaxed buffers with Ge concentrations between 0.2 and 0.3. Very high current densities up to 282 kA/cm 2 have been demonstrated in these devices despite the high of 0.93 in the tunnel direction for the ground state through the use of valley engineering [115,116].…”

Comparison of resonant tunneling currents in double gate MOS diodes with metal and poly-silicon gates

“…The resonant tunneling devices are known for many demonstrations but almost exceptionally based on III/V semiconductors. RTDs based on silicon have also been demonstrated but with the use of SiGe as the barrier layers [1][2][3][4]. Compared to SiGe/Si the SO 2 /Si system offers incomparably higher conduction band discontinuity.…”

Self-consistent solution of Schrödinger–Poisson equations in a reverse biased nano-scale $$p$$ p - $$n$$ n junction based on $$\hbox {Si/Si}_{0.4}\hbox {Ge}_{0.6}/\hbox {Si}$$ Si/Si 0.4 Ge 0.6 / Si quantum well

“…The Si/Si 1−x Ge x heterostructures (where x is the mole fraction of Ge in Si 1−x Ge x ) has added a rich variety of applications in Si monotonic technology. Especially the Si/Si 1−x Ge x /Si quantum wells can be used to realize various novel electronic devices such as high-speed heterojunction bipolar transistors, high-speed field effect transistors, modulation doped field effect transistors, resonant tunneling diodes, [14][15][16][17][18][19][20][21][22][23][24][25][26] etc. The said structure is also very useful to realize various high performance optoelectronic devices such as light emitting diodes (LEDs) [27], MOS LEDs [28], p-i-n photodetectors [29], phototransistors [30,31], etc.…”